IGBT (Insulated Gate Bipolar Transistor) encapsulating tray and IGBT module encapsulating method

A technology of module packaging and tray loading, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems affecting the contact quality between the IGBT bottom plate and the heat sink, and achieve the effect of reducing deposition

Active Publication Date: 2013-08-14
XIAN YONGDIAN ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] After the above welding process is completed, the non-welding surface of the IGBT base plate needs to be in contact with the heat sink. Since a large number of small black spots and small solder bumps are formed on the non-welding surface of the IGBT base plate, it will seriously affect the contact quality between the IGBT base plate and the heat sink.

Method used

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  • IGBT (Insulated Gate Bipolar Transistor) encapsulating tray and IGBT module encapsulating method
  • IGBT (Insulated Gate Bipolar Transistor) encapsulating tray and IGBT module encapsulating method
  • IGBT (Insulated Gate Bipolar Transistor) encapsulating tray and IGBT module encapsulating method

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Embodiment Construction

[0029] The invention provides an IGBT packaging tray, which is used for reducing impurity particles deposited on the non-welding surface of the IGBT bottom plate during the packaging process of the IGBT module.

[0030] see figure 2 , Embodiment 1 of the present invention provides an IGBT packaging tray 9, which includes a flat plate 91, and a vertical plate 92 surrounding the flat plate 91, the tray 9 is in the shape of a groove as a whole; the edge height of the vertical plate 92 is greater than or equal to the IGBT bottom plate The height of the non-welding surface; the shape surrounded by the vertical plate 92 matches the shape of the IGBT bottom plate. The tray 9 is used to be arranged between the IGBT bottom plate and the heating plate, so as to surround the non-welding surface of the IGBT bottom plate.

[0031] The flat plate of the tray can be designed according to the size of the heating plate and IGBT bottom plate of the welding furnace used. The edge height of th...

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Abstract

The invention provides an IGBT (Insulated Gate Bipolar Transistor) encapsulating tray and an IGBT module encapsulating method. The IGBT encapsulating tray comprises a flat plate and standing plates surrounding the periphery of the flat plate, wherein the tray is integrally groove-shaped; the edge of each standing plate is higher than or as high as a non-welding surface of an IGBT base plate; and the shape surrounded by the standing plates is matched with that of the IGBT base plate. During the use, the flat plate of the tray provided by the invention is used for transferring heat on a heating plate to the IGBT base plate, and the standing plates are used for surrounding the non-welding surface of the IGBT base plate, so that clearances between the non-welding surface of the IGBT base plate and the tray are sealed, as a result, the encapsulation of the IGBT module is guaranteed, and at the same time, the impurity deposition on the non-welding surface of the IGBT base plate is reduced.

Description

technical field [0001] The invention relates to an insulated gate bipolar transistor packaging technology, in particular to an IGBT packaging tray and an IGBT module packaging method. Background technique [0002] Insulated Gate Bipolar Transistor (hereinafter referred to as IGBT) has the characteristics of high frequency, high voltage and high current, and is easy to turn on and off. It is internationally recognized as the most important part of the third revolution of power electronics technology representative product. At present, IGBT has been widely used in inverter devices such as railways, urban rail transit, wind power, solar energy, clean energy and industrial control fields. During the "Tenth Five-Year Plan" period, the average annual growth rate of electronic power devices was 20%, and the share of IGBT power electronic devices reached 10%, with an average annual growth rate of more than 30%. [0003] IGBT module packaging manufacturing refers to welding and fix...

Claims

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Application Information

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IPC IPC(8): H01L21/673H01L21/58H01L21/50
Inventor王豹子
OwnerXIAN YONGDIAN ELECTRIC