A Junctionless Vertical Tunneling Field Effect Transistor

Abstract

The invention provides a junctionless lengthways tunneling field effect transistor, comprising a source region, a drain region, a channel region, a control grid and an auxiliary grid, wherein the source region, the drain region and the channel region are formed into a whole and adopt the same doped semiconducting material; the doping concentration from the source region to a channel and the drain region is the same; the control grid and the auxiliary grid are respectively located on the two sides of the channel; at least a part of the control grid and a part of the auxiliary grid are opposite to each other; the control grid is used for controlling the breakover and closing of a device; and the auxiliary grid is used for making a semiconducting region under the auxiliary grid generate transoid. The junctionless lengthways tunneling field effect transistor has only one doping type, no PN junction is needed to be made, the process difficulty is reduced, the size reduction of the device is facilitated, a short channel effect is restrained, the switching current ratio is increased, off-state current leakage is further reduced through the distance region between the control grid and the auxiliary grid, the characteristics such as a subthreshold slope can be improved, the tunneling length is effectively reduced through controlling the thickness of a semiconductor film, and the tunneling current is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junctionless vertical tunneling field effect transistor. Background technique [0002] As we all know, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the basic unit of modern electronic components. At present, all transistors have semiconductor junctions, such as PN junctions, heterojunctions, and Schottky junctions. Specifically, the most common homogeneous PN junction is formed by joining a P-type doped region with excess holes and an N-type doped region with excess electrons on the same semiconductor material, heterojunction (Hetero-junction) It is a PN junction composed of two different semiconductor materials, and a Schottky junction is composed of metal and semiconductor contacts. [0003] Typically, a traditional MOSFET device includes a source-channel junction, a drain-channel junction, and a gate stack (including gate dielectric and g...

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Problems solved by technology

However, with the urgent need for ultra-low power devices, the theoretical limit of the subthreshold slope of the junctionless field effect transistor is still 60mV / decade, which limits the reduction of the power supply voltage.

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