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Sialon phosphor, method for producing same, and light-emitting device package using same

A technology of light-emitting device and phosphor, applied in the field of Sailun phosphor, which can solve problems such as low efficiency

Active Publication Date: 2015-01-07
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this phosphor has an efficiency of 70% or less compared to the YAG phosphor, and therefore, improvement in efficiency is required

Method used

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  • Sialon phosphor, method for producing same, and light-emitting device package using same
  • Sialon phosphor, method for producing same, and light-emitting device package using same
  • Sialon phosphor, method for producing same, and light-emitting device package using same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0117] Silicon nitride (Si 3 N 4) and aluminum nitride (AlN) were used as silicon and aluminum precursors, respectively. Using a blender and a sieve, 9.6624 g of Si 3 N 4 Mixed with 0.3376 g of AlN and compacted into a BN crucible located in a piezo furnace. For sintering, the electric furnace was heated to 500°C under vacuum, and N was supplied at 500°C 2 gas. By raising the temperature from 500°C to 2050°C at 10°C / min and maintaining an air pressure of 0.9Mpa or higher, at N 2 The mixture will be sintered at 2050° C. for 5 hours under a gas atmosphere. Then, the mixture was cooled and the crucible was removed from the electric furnace. Grinding The obtained first sintered body was ground and passed through a 100-mesh sieve.

[0118] 10 g of the first sintered body and 0.1324 g of europium oxide (Eu 2 o 3 )mix. By raising the temperature from 500°C to 1900°C at 10°C / min and maintaining an air pressure of 0.9Mpa or higher, at N 2 The mixture was sintered at 1900° C...

example 2

[0120] In addition to using 9.6624g of Si 3 N 4 , 0.3376g of AlN and 0.1324g of Eu 2 o 3 And a β-sialon phosphor was prepared in the same manner as Example 1 except that the second sintering was performed at 1800°C.

example 3

[0122] In addition to using 9.6624g of Si 3 N 4 , 0.3376g of AlN and 0.1324g of Eu 2 o 3 And a β-sialon phosphor was prepared in the same manner as Example 1 except that the second sintering was performed at 1500°C.

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Abstract

A method for producing a sialon phosphor is provided. The method includes mixing a silicon precursor and an aluminum precursor and sintering the mixture to form a first sintered body. The first sintered body and a precursor for an active material are mixed and the mixture is heat-treated to form a second sintered body. That is, the exemplary method for producing a sialon phosphor involves firstly forming the first sintered body serving as a host material to stably ensure a crystal structure, and then mixing the active material and the first sintered body so as to preserve the role of the active material without sacrificing the crystal structure of the first sintered body.

Description

technical field [0001] The present application relates to a sialon phosphor, a method for preparing the sialon phosphor, and a light-emitting device package using the sialon phosphor, and more particularly, to a sialon phosphor capable of improving brightness Body, a method for manufacturing the sialon phosphor, and a light emitting device package using the sialon phosphor. Background technique [0002] Phosphors are used in vacuum fluorescent displays (VFDs), field emission displays (FEDs), plasma display panels (PDPs), light emitting displays (LEDs), and the like. To cause the phosphor to emit light, energy for causing the phosphor to be excited is supplied to the phosphor, and the phosphor is excited by an excitation source having high energy, for example, by vacuum ultraviolet rays, ultraviolet rays, electron beams, or blue light. However, since these excitation sources deform the phosphor and thus the phosphor tends to suffer from reduction in luminance and degradation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/64H01L33/00
CPCC09K11/0883H05B33/14B22F3/02C09K11/7728H01L33/502C09K11/7734H01L2924/181H01L2224/48091H01L2224/48247H01L2224/48257C09K11/77348H01L2924/00014H01L2924/00012
Inventor 元炯植尹喆洙朴允坤尹畅繁
Owner SAMSUNG ELECTRONICS CO LTD