Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Etching and deposition technology three-dimensional cell information storage structure and operation method

A deposition process and three-dimensional cell technology, which is applied in the field of three-dimensional cell information storage structure, can solve problems such as the inability to store cell information, and achieve the effect of lossless compression storage

Inactive Publication Date: 2013-10-02
TSINGHUA UNIV
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can solve the problem that existing computer hardware conditions cannot store all cell information in the simulation of etching and deposition processes in the semiconductor manufacturing process using cellular automata under high-resolution conditions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching and deposition technology three-dimensional cell information storage structure and operation method
  • Etching and deposition technology three-dimensional cell information storage structure and operation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] The invention proposes a three-dimensional cellular information storage structure and operation method during the simulation of etching and deposition process cellular automata, which is used to realize the three-dimensional cellular automata simulation of etching and deposition process in the semiconductor manufacturing process, combined with the accompanying drawings and implementation Example details are as follows:

[0042] This embodiment designs a three-dimensional cellular information storage structure during the simulation of etching and deposition process cellular automata. Let l, w and h represent the three dimensions along the x-axis, y-axis and z-axis in the three-dimensional cellular automata model respectively. The number of direction cell divisions; each cell can be regarded as a point (x,y,z) in a three-dimensional discrete Euclidean space, x∈[0..l-1], y∈[0..w -1], z∈[0..h-1], x, y and z represent the coordinate position of the cell on the x-axis, y-axis...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a three-dimensional cell information storage structure and an operation method during etching and deposition technology cell automata simulation, and belongs to the technical field of simulation on etching and deposition courses during a micro-electronic processing course. The storage structure is characterized in that a two-dimensional static array is created to express information of a cell automata model, wherein information of each element of the two-dimensional static array comprises recording of the number of all surface cells of a (x, y) column, and a one-dimensional dynamic array for storing all the surface cells of the (x, y) column; each element in the one-dimensional dynamic array records information of the cells, records coordinate values z of the surface cells along a z axis, and is used for reducing the three-dimensional cell automata model; and all the elements in the one-dimensional dynamic array zcell are sequenced according to the coordinate values z in an ascending manner. The operation method of the cells comprises the steps of random access on the cells, and adding, deleting and modifying of the cell information. The storage structure and the operation method solve the problem that the existing three-dimensional cell information storage structure used during cell automata simulation cannot realize high-resolution cell automata simulation.

Description

technical field [0001] The invention belongs to the technical field of simulating etching and deposition processes in the process of microelectronics processing, and in particular relates to a three-dimensional cellular information storage structure for realizing the three-dimensional cellular automata simulation of etching and deposition processes in the semiconductor manufacturing process. Background technique [0002] Deposition and etching are key steps in the fabrication process of integrated circuits, and their quality determines the performance and integration of the final integrated circuit. The simulation of the deposition and etching process is a powerful tool to guide and manufacture high-quality integrated circuits, and it is also an important method to better understand and understand the principles of etching and deposition. [0003] Cellular automata is a dynamical system with discrete time, space, and state. It is an important research method in nonlinear sci...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F17/50
Inventor 杨宏军宋亦旭孙晓民贾培发
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com