Solid-state imaging element and electronic apparatus

Abstract

A solid-state imaging element includes a light receiving unit formed on a semiconductor base, and an anti-reflection film formed on the light receiving unit. The anti-reflection film has a plurality of planar layers whose planar layer in an upper layer is narrower than the planar layer in a lower layer.

Description

technical field [0001] The present invention relates to a solid-state imaging element and electronic equipment having the solid-state imaging element. Background technique [0002] In the past, solid-state imaging elements employ a configuration in which an antireflection film is provided on a portion of a semiconductor base where a light receiving unit is formed for suppressing reflection of light at an interface between a semiconductor base such as a silicon substrate and an insulating film thereon resulting in decreased sensitivity. [0003] However, when the light incident on the semiconductor base is incident on the end of the anti-reflection film from an oblique direction, the light passes through the anti-reflection film, and then, a part of the light is not incident on the light receiving unit, but on the surface of the semiconductor base reflective and directed to the outside of the anti-reflective film. As a result, this tends to cause problems such as smear phen...

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Problems solved by technology

As a result, this is prone to problems such as smearing and color mixing

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