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Semiconductor device

A technology for semiconductors and devices, which is applied in the field of semiconductor design and can solve problems such as the destruction of anti-fuse 12

Active Publication Date: 2013-10-30
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, since a voltage difference corresponding to a level at which the antifuse 12 is programmed can be generated across the antifuse 12, the antifuse 12 can be destroyed

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Embodiment Construction

[0025] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. However, this invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Throughout this disclosure, like reference numerals designate like parts in different drawings and embodiments of the invention.

[0026] image 3 is a configuration diagram for explaining the basic structure of a semiconductor device before describing in detail the semiconductor device according to an exemplary embodiment of the present invention.

[0027] see image 3 The semiconductor device 100 includes a plurality of fuse blocks FB0 to FBm, a plurality of output units SA0 to SAm, a plurality of switching units SW0 to SWm, a word line ...

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Abstract

A semiconductor device includes a fuse unit connected to a detection node and configured to be programmed in response to a first voltage supplied through the detection node, an output unit connected to the detection node and configured to output a fuse information signal indicating whether the fuse unit is programmed or not, and a blocking unit configured to block the first voltage supplied through the detection node in response to the fuse information signal.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2012-0042165 filed on Apr. 23, 2012, the entire contents of which are hereby incorporated by reference. technical field [0003] Exemplary embodiments of the present invention relate to semiconductor design technology, and more particularly, to a semiconductor device including a fuse unit. Background technique [0004] In general, a semiconductor device such as a DRAM (Dynamic Random Access Memory) includes a fuse circuit. A fuse circuit is a circuit that inverts and outputs a previous selection signal via a fuse programming method, and is used in a voltage control circuit, a redundant circuit, etc. to selectively supply a selection signal. [0005] Generally, the fuse programming method may include a laser blowing method and an electrical method. The laser blowing method uses a laser beam to cut off the connection state of the fuse. The fuse pro...

Claims

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Application Information

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IPC IPC(8): G11C17/16
CPCG11C17/16G11C17/18G11C29/04
Inventor 金贵东
Owner SK HYNIX INC