Split gate resistor structure and manufacturing method thereof
A manufacturing method and resistor technology, which are applied in the direction of electric solid device, semiconductor/solid state device manufacturing, circuits, etc., can solve the problems of inability to change the width of the split gate resistor 20, poor practicability and flexibility, etc., and improve practicability. and the effect of flexibility
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[0040] The structure of the split gate resistor and its manufacturing method proposed by the present invention will be further described in detail below in conjunction with the drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and all use imprecise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.
[0041] Please refer to figure 2 , This embodiment proposes a method for manufacturing a split gate resistor, including the steps:
[0042] First, a semiconductor substrate is provided, and the semiconductor substrate is provided with a shallow trench isolation layer 100;
[0043] Next, a split gate resistance layer 200 and a hard mask layer 300 are sequentially formed on the shallow trench isolation layer 100 of the semiconductor...
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