Atomic force sensor manufacturing method and sensor and its measuring device and method

A technology of atomic force sensor and tuning fork, which is applied in measuring devices, instruments, scanning probe microscopy, etc., can solve the problems of long measurement time, difficult implementation, and no solution, and achieve the effect of improving resolution

Inactive Publication Date: 2016-02-03
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this kind of measurement cannot directly output and save the measured parameters, the measurement time is long, and for different sensor bases, different instrument designs are required to cooperate with the measurement, which is not easy to achieve
[0005] For the above-mentioned problems existing in the prior art, there is no solution at present

Method used

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  • Atomic force sensor manufacturing method and sensor and its measuring device and method
  • Atomic force sensor manufacturing method and sensor and its measuring device and method
  • Atomic force sensor manufacturing method and sensor and its measuring device and method

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Embodiment Construction

[0020] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0021] figure 1 is a flowchart of a method of manufacturing an atomic force sensor according to an embodiment of the present invention. Such as figure 1 As shown, the present invention provides a method for manufacturing an atomic force sensor, including: fixing the lower cantilever of the tuning fork on the ceramic substrate with insulating glue, wherein the ceramic substrate is provided with a tunnel current extraction electrode and a charge extraction electrode (S10) , there is a tuning fork electrode at the end of the upper cantilever and the end of the lower cantilever of the tuning fork; the upper cantilever of the tuning fork is coated with a rectangula...

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Abstract

The invention discloses a manufacturing method for an atomic power sensor, a sensor, and an atomic power sensor measuring apparatus and a method thereof. The manufacturing method comprises: a lower cantilever of a tuning fork is fixed at a ceramic substrate by an insulation paste, wherein the ceramic pedestal is provided with a tunnel current extraction electrode and a charge extraction electrode and tuning fork electrodes are respectively arranged at the tail end of the upper cantilever and the tail end of the lower cantilever of the tuning fork; a rectangular insulated layer is coated at a position, approaching a free end, of the upper cantilever of the tuning fork; one end portion of a tungsten filament and one end portion of a spun gold are pasted at the rectangular insulated layer, wherein the tungsten filament and the spun gold are respectively perpendicular to the upper cantilever of the tuning fork and the spun gold is in an approximate U shape; the other end of the spun gold is connected with the tunnel current extraction electrode; the tuning fork electrode of the tail end of the upper cantilever of the tuning fork is connected with the charge extraction electrode by a lead; and the free end of the tungsten filament is etched into a shape of a needle tip. According to the invention, a small-amplitude atomic power sensor with precisely controllable parameters can be manufactured rapidly; the proportion of a short-range force in a measuring signal is improved; and the resolution ratio of the sensor is enhanced.

Description

technical field [0001] The invention relates to the field of atomic force microscopes, in particular to a manufacturing method of an atomic force sensor, a sensor and a measuring device and method thereof. Background technique [0002] Atomic Force Microscope (AFM for short) was invented by scientists from IBM in 1986. Due to its wide application prospects in the field of material science and basic scientific research, it has developed rapidly in recent years. Its core component is an atomic force sensor for detecting weak atomic force signals. At present, commonly used atomic force sensors are made of silicon materials. Generally, a nanoscale sharp needle tip is etched at the end of a long and thin silicon cantilever. There are two main types of this kind of sensor corresponding to different working modes. The first one is a cantilever with an elastic constant of 1N / m. Its working principle is to measure the deformation of the silicon cantilever and use the relationship ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01Q60/38
Inventor 陈鹏程袁秉凯仉君程志海裘晓辉
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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