Preparation method of copper-indium-gallium-selenium alloy

Abstract

The invention discloses a preparation method of a copper-indium-gallium-selenium alloy. The preparation method comprises the following steps of: a, mixing: uniformly mixing four raw materials including copper, indium, gallium and selenium according to a molar ratio of 1:(0.6-0.9):(0.3-0.6):(1.9-2.2); b, sealing: filling the mixed material of the copper, indium, gallium and selenium into a reaction kettle, vacuumizing, introducing argon into the reaction kettle, and sealing the reaction kettle; c, heating: putting the reaction kettle into a heating furnace, wherein when the temperature of the reaction kettle reaches 300 DEG C by heating, the reaction kettle starts to perform rocking motion along with the heating furnace, and when the temperature of the reaction kettle is raised to 1250 DEG C, the temperature is kept constant for 2-6 hours; d, cooling: stopping the movement of the heating furnace when the temperature of the reaction kettle is lowered to the room temperature, opening the reaction kettle to release the argon, and taking the alloy out of the reaction kettle to obtain the copper-indium-gallium-selenium alloy. According to the preparation method of the copper-indium-gallium-selenium alloy, pollutions caused by leakage to equipment and the environment are avoided, the copper, indium, gallium and selenium can react fully, and the probability of explosion and strength of explosion are reduced.

Description

technical field [0001] The application belongs to the technical field of metallurgy and relates to a method for preparing an alloy, in particular to a method for preparing a copper indium gallium selenide alloy. Background technique [0002] Academia and industry generally believe that the development of solar cells has entered the third generation. The third-generation solar cells are compound thin-film solar cells such as copper indium gallium selenide CIGS and thin-film Si series solar cells. Copper indium gallium selenide solar cells have the highest conversion efficiency among thin film solar cells and have good development potential. [0003] Due to the sensitive element ratio and complex multi-layer structure of copper indium gallium selenide thin film solar cells, the requirements for its preparation method and preparation conditions are extremely strict, and the industrialization process is very slow. [0004] At present, the commonly used method for preparing cop...

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Problems solved by technology

[0005] The disadvantages of the above "selenization" method are: long production cycle, low production efficiency; high energy consumption; Se is not only highly toxic, it is easy to cause safety accidents, and gaseous Se is very corrosive to other metals, which is easy to cause leakage of Se Steam; In the prepared film, the distribution of Se is not uniform, etc.

At present, there are still many problems in the industrial synthesis of copper indium gallium selenide alloy, such as: long production cycle, low output, unstable products, corrosion of equipment, etc.

[0007] Especially considering that the boiling point of Se is very low, only 685°C, which is lower than the melting point of Cu. In this way, during the high-temperature smelting process, Se will react violently with the other three elements and explode. The existing copper indium gallium In the process of selenium alloy, some use separate containers to hold copper, indium, gallium, and selenium respectively, so that the copper, indium, gallium, and selenium are not fully contacted. The main problems caused by this are insufficient reaction and poor product quality. Unstable and prone to pollution, etc.

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