Tracking circuit that controls the opening of the sense amplifier and sram using the tracking circuit

Abstract

The invention discloses a tracking circuit for controlling the opening of a sensitive amplifier and an SRAM using the tracking circuit. The tracking circuit includes: a bit line discharge duplication module for simulating the bit line discharge of a memory cell in the SRAM. The line is connected to the control terminal of the sense amplifier; the leakage current simulation module used to simulate the leakage current of the memory cell in the SRAM is connected to the control terminal of the sense amplifier through a duplicate bit line. The tracking circuit disclosed by the present invention is based on the existing tracking circuit, adding a leakage current simulation module for simulating the leakage current of the storage unit in the SRAM, and using the leakage current simulation module to compensate for the other The bit line discharge time increased without the leakage current of the read / write memory cell makes the delay of the SAE signal after the tracking circuit of the present invention closer to the real discharge time of the memory cell bit line, thereby effectively controlling the opening of the sense amplifier, Accelerate the reading speed of SRAM.

Description

technical field [0001] The invention relates to a SRAM (Static RAM, static random access memory) circuit, in particular to a tracking circuit for controlling the opening of a sensitive amplifier in the SRAM and an SRAM using the tracking circuit. Background technique [0002] As the functions of digital integrated circuits become more and more complex and the scale is larger and larger, static memory has become a very important part of digital systems, and memory with high storage speed and low power consumption has become the mainstream of static memory development. SRAM (Static RAM, static random read-write memory) has the advantages of no need to refresh, easy to use, and fast speed. Therefore, in recent years, SRAM has been widely used in portable devices such as mobile phones and computers, and has become a high-speed and low-power consumption SRAM. inevitable trend of development. [0003] figure 1 A partial structure of the SRAM is shown. Wherein, the storage funct...

AI Technical Summary

Problems solved by technology

Therefore, affected by the ever-increasing leakage current, the time of passing through the SAE signal generated by the tracking circuit 1 cannot accurately copy the discharge time of the bit line, resulting in the inability to accurately control the turn-on time of the sense amplifier 3, which increases the probability of SRAM misreading Big

In order to reduce the occurrence of this situation, a long turn-on time of the sense amplifier 3 is usually reserved so that the SRAM can improve the yield rate, which will definitely affect the access speed of the SRAM

Images