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Preparation method of thick polysilicon

A technology of polysilicon and polysilicon layer, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as hardware loss

Inactive Publication Date: 2014-01-15
CSMC TECH FAB1
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  • Abstract
  • Description
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Problems solved by technology

[0004] However, there is currently no solution that can well solve the problem of hardware loss due to the accumulation of by-products in the reactor

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  • Preparation method of thick polysilicon
  • Preparation method of thick polysilicon

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Embodiment Construction

[0018] In the present invention, in addition to common low-pressure chemical vapor deposition, the following polysilicon preparation methods are also involved, including:

[0019] 1. Solid Phase Crystallization (SPC)

[0020] The so-called solid-phase crystallization means that the crystallization temperature of the amorphous solid is lower than the crystallization temperature after melting. This is an indirect method of generating polysilicon. First, silane gas is used as a raw material, and a-Si film is deposited at about 550°C by low-pressure chemical vapor deposition, and then the film is melted at a high temperature above 600°C. When the temperature is slightly lower, crystal nuclei appear, and as the temperature decreases, the molten silicon continues to crystallize on the crystal nuclei, making the crystal grains increase and transform into polysilicon films.

[0021] Using this method, the grain size of a polysilicon film depends on the film thickness and crystall...

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Abstract

The invention discloses a preparation method of thick polysilicon. The preparation method comprises the following steps: a layer of thin polysilicon is deposited on the positive surface of a silicon chip to be used as a seed layer; and a layer of thick polysilicon epitaxially grows on the seed layer by the use of an epitaxial gas, By the preparation method, thick polysilicon can be obtained highly efficiently, and problems caused by stacking of by-products in a reacting furnace also can be solved.

Description

technical field [0001] The invention relates to semiconductor device technology, in particular to a preparation method of electronic-grade silicon, an important raw material in the semiconductor device. Background technique [0002] Polysilicon is an important semiconductor material, widely used in integrated circuits, solar devices and micro-electromechanical systems and other fields. The most common method for preparing polysilicon is low-pressure chemical vapor deposition (LPCVD). The process of preparing polysilicon is to deposit polysilicon through thermal decomposition of SiH4 at a high temperature of about 630 °C. The polysilicon crystal grains grown by this method are small, but the growth rate is slow, and the growth thickness is generally about 1 micron. When the growing polysilicon is too thick, the accumulation of by-products in the reactor will cause damage to hardware such as pumps. [0003] In addition, the Siemens method is also a common method for preparin...

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Application Information

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IPC IPC(8): H01L21/205
CPCH01L21/02381H01L21/0245H01L21/02532H01L21/0262
Inventor 荆二荣周国平夏长奉苏巍
Owner CSMC TECH FAB1
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