Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device and method of manufacturing the same are disclosed. In one embodiment, a semiconductor device includes a workpiece and a plurality of first conductive lines disposed over the workpiece and in a metallization layer. A plurality of second conductive lines are disposed over the workpiece and in the metallization layer. In the cross section of the workpiece, the vertical height of the plurality of second conductive wires is greater than the vertical height of the plurality of first conductive wires.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same. Background technique [0002] Semiconductor devices are used in a variety of electronic applications such as personal computers, cell phones, digital cameras, and other electronic equipment. Usually semiconductor devices are manufactured by sequentially depositing various insulating or dielectric layers, conductive layers, and semiconducting material layers over a semiconductor substrate, and patterning the various material layers using photolithography to form circuit components and element. [0003] The semiconductor industry continues to increase the integration density of various electronic components (eg, transistors, diodes, resistors, capacitors, etc.) by continuously reducing the minimum component size so that more components can be integrated into a given area. As the size of the wires decreases, the problem of electromigration or high resistance ...

AI Technical Summary

Problems solved by technology

The problem of electromigration or high resistance occurs due to the reduced size of the wire, which increases the resistance of the wire and can cause device failure

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