System for testing temperature distribution characteristics of power semiconductor module
A technology of power semiconductor and temperature distribution, applied in radiation pyrometry, control/regulation system, temperature control by electric method, etc., can solve the problem of inability to simulate actual working conditions, and achieve the effect of reliable temperature data
Inactive Publication Date: 2014-02-12
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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Problems solved by technology
[0005] This method of testing the temperature distribution characteristics of power semiconductor modules cannot simulate actual working conditions and perform real-time testing
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[0025] Hereinafter, the present invention will be described in detail with reference to the drawings and specific embodiments.
[0026] The present invention provides a power semiconductor module temperature distribution characteristic test system to realize real-time testing under simulated actual working conditions, thereby providing reliable temperature data for the layout design of the power semiconductor module.
[0027] Two specific embodiments are given below to illustrate the present invention in detail.
[0028] The first preferred embodiment.
[0029] Such as figure 1 As shown, the temperature distribution characteristic test system of the power semiconductor module of this embodiment includes: a control unit 101, a power supply unit 102, a load 103, a power semiconductor module drive unit 104, an infrared camera 105, and a host computer 106, current The sensor 107, the voltage sensor 108, the cooling device 109, the temperature sensor 110, and the display unit 120.
[0030] ...
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The invention discloses a system for testing temperature distribution characteristics of a power semiconductor module. The system comprises a power supply unit, a control unit, a thermal infrared imager, a load, a drive unit of the power semiconductor module and an upper computer. The control unit is used for supplying power to the load through the power supply unit, controlling and adjusting load current under a constant-voltage mode and / or controlling and adjusting load voltage under a constant-current mode and controlling the measured power semiconductor module to be in different actual working states through the drive unit according to working parameters, sent by the upper computer, of the different actual working states; the upper computer is used for receiving temperature data, sent by the thermal infrared imager, of the measured power semiconductor module to acquire the temperature distribution characteristics of the measured power semiconductor module, producing the working parameters of the different actual working states and sending the working parameters of the different actual working states to the control unit. By means of system for testing the temperature distribution characteristics of the power semiconductor module, it is achieved that real-time tests under actual working conditions are simulated, and accordingly the reliable temperature data can be provided for layout design of the power semiconductor module.
Description
Technical field [0001] The invention relates to a testing technology of a semiconductor module, in particular to a temperature distribution characteristic testing system of a power semiconductor module. Background technique [0002] Generally, power semiconductor devices, such as insulated bipolar transistor (IGBT) devices, generate heat during power-on operation. Generally speaking, circuits with different topologies are composed of one or more power semiconductor modules, and each power semiconductor module mainly includes a power semiconductor chip, DBC, copper substrate, etc. With the improvement of chip integration, the heat flux density per unit volume of the power semiconductor module formed by it is getting higher and higher, resulting in a sharp increase in heat generation and temperature. At the same time, because the current intensity of each part of the power semiconductor module is not equal, the temperature of each part of the chip surface in the power semiconducto...
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Login to View More IPC IPC(8): G01J5/00G01R19/00G05F1/46G05D23/19
Inventor 郑利兵花俊方化潮韩立靳鹏云王春雷
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI