A kind of manufacturing method of field termination type igbt device
A manufacturing method and field termination technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of leakage risk, uneven laser annealing, high manufacturing cost, and achieve the effect of increasing cost
Active Publication Date: 2017-10-17
STATE GRID CORP OF CHINA +2
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Problems solved by technology
[0008] The disadvantage of prior art 1 is the need for high energy H + Injection machine, which is expensive and occupies a large area
Existing technology 2 is suitable for IGBTs with low blocking voltage (for example, 600V), because IGBTs with a voltage level above 1200V require an epitaxial layer thickness of more than 120um, and the manufacturing cost is high
The disadvantage of prior art 3 is that the FS region is too thin, the process is difficult to control, and there is a potential leakage risk; in addition, the laser also has the problem of uneven annealing, and the equipment is expensive
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[0045] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0046] The invention provides a method for manufacturing a field stop type IGBT device. Determine the thickness of the N-type doped FZ single crystal silicon wafer according to the voltage level of the IGBT device to be developed; ion-implant phosphorus impurities from the back of the silicon wafer and perform high-temperature annealing to form a thickness of 15-70um and a doping concentration of 2×10 13 ~2×10 15 / cm 3 The N-type doped buffer layer; corrode the back protective layer, rough the back by etching or sandblasting to form a gettering source; remove the front protective layer, and manufacture the IGBT cell area on the front of the silicon wafer; from the silicon wafer Grind the silicon substrate with a thickness of 5-30um on the back, etch ~2um on the back, leaving an N-type buffer layer with a thickness of 1...
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Abstract
Provided is a method for manufacturing a field stop IGBT device. The method comprises the following steps: selecting an N-type doped FZ monocrystalline silicon wafer (01), wherein a thickness thereof is determined according to a voltage level; injecting phosphorus impurities with ions from a back surface of the silicon wafer (01) and annealing at a high temperature, so as to form an N-type doped buffer layer (02) with a thickness of 15-70μm and a doping concentration of 2×1013-2×1015 / cm3; etching away a protective layer (01a) of the back surface, and roughening the back surface through a corrosion or abrasive blasting method to form a gettering source; removing the protective layer (01a, 01b) from a front surface, and manufacturing an IGBT cellular region (21) on the front surface of the silicon wafer; grinding a silicon substrate with a thickness of 5-30μm from the back surface of the silicon wafer, and then etching for a thickness of 2μm to leave the &Ngr;-type buffer layer with a thickness of 10-65μm as a field stop region; and accomplishing the manufacturing of a collector region (22) of the back surface. The method does not need an expensive high-energy ion injection device or an epitaxial device and is applicable to the manufacturing of a 1700-6500V field stop IGBT device.
Description
technical field [0001] The invention relates to a manufacturing method in the technical field of semiconductor devices, in particular to a manufacturing method of a field-stop type IGBT device. Background technique [0002] In recent years, Insulated Gate Bipolar Transistor (IGBT) technology has developed rapidly and has become a core device for energy saving, emission reduction and intelligent management of electric energy. IGBTs with a voltage level greater than 2500V have been widely used in high-voltage direct current transmission and flexible alternating current transmission power systems of smart grids. [0003] The IGBT with a blocking voltage greater than 2500V was originally a non-punch through type (NPT type for short), and an IGBT with a field stop type (Field stop type for short, FS type for short) structure has been successfully developed in recent years. The FS type IGBT is thinner than the NPT type IGBT in total thickness, and a layer thickness of 15-40um is ...
Claims
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IPC IPC(8): H01L21/331
CPCH01L29/66325H01L29/36H01L29/66333H01L29/7395
Inventor 高文玉刘隽王耀华刘钺杨刘江于坤山张宇包海龙车家杰
Owner STATE GRID CORP OF CHINA