Trench isolation structure and forming method thereof

A technology of trench isolation and trench, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of low write rate, leakage current of non-volatile memory devices, and poor isolation effect of shallow trench isolation structures To avoid short circuit, improve writing rate and reduce leakage current

Active Publication Date: 2014-02-19
WINBOND ELECTRONICS CORP
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Problems solved by technology

However, in the current manufacturing process, the isolation effect of the formed shallow trench isolation structure is

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  • Trench isolation structure and forming method thereof
  • Trench isolation structure and forming method thereof
  • Trench isolation structure and forming method thereof

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[0025] In order to have a clearer understanding of the technical features, objectives and effects of the present invention, specific embodiments of the present invention will now be described with reference to the accompanying drawings.

[0026] Several different embodiments are listed below according to different features of the present invention. The specific elements and arrangements in the present invention are for simplicity, but the present invention is not limited to these embodiments. For example, the description of forming the first element on the second element may include an embodiment in which the first element is in direct contact with the second element, and also includes an additional element formed between the first element and the second element so that the An embodiment where one element and the second element are not in direct contact. In addition, for the sake of brevity, the present invention is represented by repeated element symbols and / or letters in diffe...

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Abstract

The embodiments of the invention provide a trench isolation structure and a forming method thereof. The method comprises: providing a substrate; forming a trench in the substrate; correspondingly forming a first insulation layer in the trench to cover the trench; correspondingly forming a nitrogen lining layer on the first insulation layer; forming a second insulation layer on the nitrogen lining layer and filling up the trench; etching the second insulation layer to enable the upper surface of the second insulation layer to be lower or equal to the upper surface of the substrate; and forming a third insulation layer on the second insulation layer to cover the second insulation layer so that the third insulation layer, the first insulation layer, the nitrogen lining layer and the second insulation layer form the trench isolation structure. By using the trench isolation structure and the forming method thereof, gaps can be prevented from forming in the trench isolation structure, and leakage current can be reduced.

Description

technical field [0001] The present invention relates to trench isolation structures and methods of forming the same, and more particularly to a method for avoiding the formation of voids in trench isolation structures. Background technique [0002] With the advancement of semiconductor technology and application requirements, non-volatile memory technology has rapidly developed into a common and indispensable electronic product in daily life. Compared with only needing to store a small amount of boot code in the past, non-volatile memory devices often need to store gigabits (GB) of music and video data in today's applications, and therefore bring great opportunities for the development of non-volatile memory. Come revolutionary change. [0003] In non-volatile memory devices, shallow trench isolation (STI) is one of the important elements for isolating adjacent semiconductor devices. However, in the current manufacturing process, the isolation effect of the formed shallow ...

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Application Information

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IPC IPC(8): H01L21/762
CPCH01L21/022H01L21/76224
Inventor 卓旭棋蔡耀庭廖修汉
Owner WINBOND ELECTRONICS CORP
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