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Vertical power mosfet transistor and method of forming the same

A field effect transistor and power technology, applied in the field of vertical power MOSFET transistor and its formation, can solve the problems of high resistance and affecting the driving current of vertical power MOSFET

Active Publication Date: 2017-04-12
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the resistance of the n-JFET region is high, and the high resistance of the n-JFET region adversely affects the drive current of the vertical power MOSFET

Method used

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  • Vertical power mosfet transistor and method of forming the same
  • Vertical power mosfet transistor and method of forming the same
  • Vertical power mosfet transistor and method of forming the same

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Embodiment Construction

[0052] The manufacture and use of this embodiment are described in detail below. It should be appreciated, however, that these embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are illustrative only, and do not limit the scope of the invention.

[0053] According to various exemplary embodiments, a vertical power metal oxide semiconductor field effect transistor (MOSFET) and a method of forming the same are provided. Intermediate stages in forming a vertical power MOSFET are shown. Variations of the embodiments are discussed. The same reference numerals are used to refer to the same elements in the various views and exemplary embodiments of the invention.

[0054] Figure 1A to Figure 1F is a cross-sectional view of an intermediate stage in the formation of an n-type vertical power MOSFET. refer to Figure 1A , a semiconductor region 20 is provided, which is part of the se...

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Abstract

A device comprises a first conductivity semiconductor layer and first and second body areas formed on a semiconductor layer. The first and second body areas have second conductivity which is opposite to first conductivity. A doped semiconductor area of the first conductivity is arranged between the first and second body areas and is in contact with the first and second body areas. A gate dielectric layer is arranged on the first and second body areas and on the doped semiconductor layer. First and second gate electrodes are arranged on the gate dielectric layer and are overlapped with the first and second body areas. The first and second gate electrodes are physically separated from each other by a space and are electrically mutually touched. The space between the first and second electrodes is overlapped with the doped semiconductor area. The device comprises an MOS containing element also.

Description

[0001] This application is a continuation-in-part of US Patent Application 13 / 483,633, entitled "Vertical Power MOSFET and Methods of Forming the Same," filed June 1, 2012, which is incorporated herein by reference. technical field [0002] The present invention relates to the technical field of semiconductors, and more particularly, to a vertical power MOSFET transistor and a forming method thereof. Background technique [0003] In a conventional vertical power metal-oxide-semiconductor field-effect transistor (MOSFET), two p-body regions are formed in an n-type epitaxial region. The vertical power MOSFET is named so because the source and drain regions of the vertical power MOSFET overlap. A portion of the epitaxial region between the two P body regions is lightly doped to form an n-type doped region, sometimes called an N-type junction field effect transistor (n-JFET) region. The p-body region and n-JFET region are located below the gate dielectric and gate electrode. W...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/088H01L29/78H01L29/423H01L21/8234H01L21/336H01L21/28
CPCH01L21/82385H01L21/823885H01L21/823892H01L27/0922H01L27/0928
Inventor 伍震威周学良苏柏智柳瑞兴
Owner TAIWAN SEMICON MFG CO LTD