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A method for manufacturing a light-emitting diode wire electrode

A technology of light-emitting diodes and wire-bonded electrodes, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of affecting the quality of light-emitting diodes, the bonding force between leads and electrodes cannot be greatly improved, and off-lines, etc.

Active Publication Date: 2016-03-02
LIYANG TECH DEV CENT
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this electrode structure can increase the connection quality of the electrodes to a certain extent, because the electrodes are planar electrodes, after wiring, the connection between the leads and the electrodes is still limited to the plane range of the electrodes, so the bonding force between the leads and the electrodes remains the same. It cannot be greatly improved, and there is a possibility of being off-line, which will affect the quality of LEDs

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  • A method for manufacturing a light-emitting diode wire electrode
  • A method for manufacturing a light-emitting diode wire electrode
  • A method for manufacturing a light-emitting diode wire electrode

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Embodiment Construction

[0018] see Figure 1-5 The method for manufacturing the wire-bonding electrodes of the light-emitting diode proposed by the present invention is introduced.

[0019] see Figure 1-2 , the manufacturing method of light-emitting diode bonding electrode comprises the following steps:

[0020] (1) Forming the p-type semiconductor layer 100 , the semiconductor light-emitting layer 200 and the n-type semiconductor layer 300 sequentially from bottom to top;

[0021] (2) forming a transparent flat electrode 10 on the n-type semiconductor layer 300;

[0022] (3) Evaporating a metal alloy layer on the flat electrode 10;

[0023] (4) performing photolithography and etching processes on the alloy metal layer, so as to form the metal alloy layer into bump electrodes 20 ;

[0024] (5) Roughen the upper surface and all side surfaces of the bump electrode 20 to form a bump roughened electrode 201

[0025] see image 3 ,Should image 3 It shows the top view of the electrode produced by t...

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Abstract

The invention discloses a method for manufacturing a wire bonding electrode of a light emitting diode. The method sequentially comprises the following steps: (1) sequentially forming a p-type semiconductor layer, a semiconductor light emitting layer and an n-type semiconductor layer from bottom to top, (2) forming a transparent flat electrode on the n-type semiconductor layer, (3) plating the flat electrode with an alloying metal layer in an evaporation mode, (4) conducting photoetching and etching processes on the alloying metal layer to accordingly enable the alloying metal layer to form a protruding block electrode, and (5) conducting coarsening processing on the upper surface of the protruding block electrode and all the lateral surfaces to accordingly form a protruding block coarsening electrode. The surface roughness of the protruding block coarsening electrode is higher than 10nm and lower than 15nm.

Description

technical field [0001] The invention belongs to the technical field of light-emitting diodes, in particular to a method for manufacturing wire-bonded electrodes of light-emitting diodes. Background technique [0002] Semiconductor light-emitting diodes (LightEmittingDiode) are increasingly widely used, especially in lighting, which tends to replace incandescent and fluorescent lamps. A light-emitting diode is a light-emitting element made of semiconductor materials. The element has two electrode terminals. A voltage is applied between the terminals, and a very small current is passed through. The remaining energy can be excited and released in the form of light through the combination of electron holes. , which is the basic light-emitting principle of light-emitting diodes. Light-emitting diodes are different from ordinary incandescent light bulbs. Light-emitting diodes are cold-emitting, with low power consumption, long component life, no warm-up time, and fast response. I...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38H01L33/00
CPCH01L33/387H01L33/62H01L2933/0016
Inventor 丛国芳
Owner LIYANG TECH DEV CENT
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