Bipolar pnp transistor and method of manufacturing the same

Abstract

The invention provides a bipolar PNP transistor and a manufacturing method thereof. The bipolar PNP transistor comprises a substrate, an epitaxial layer formed on the substrate, a deep phosphorus zone, a base zone, a collection zone and an emission zone which are formed in the epitaxial layer, a first interlayer dielectric layer and a voltage modulation dielectric layer which are formed on the epitaxial layer, a first interconnection line formed on the first interlayer dielectric layer and the voltage modulation dielectric layer, a second interlayer dielectric layer formed on the first interlayer dielectric layer and the first interconnection line, and a second interconnection line formed on the second interlayer dielectric layer, wherein the base zone is covered by the voltage modulation dielectric layer, and electric leading out is realized through the first interconnection line. According to the bipolar PNP transistor and the manufacturing method, through forming the voltage modulation dielectric layer on the base zone, the electric leading out of the voltage modulation dielectric layer is realized through the first interconnection line, so the charge concentration of a base zone surface is changed through changing the induction charge number of the voltage modulation dielectric layer, and thus the magnification times of small current is adjustable.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a bipolar PNP transistor and a manufacturing method thereof. Background technique [0002] A photoelectric sensor is a sensor that converts light signals into electrical signals through photosensitive devices. At present, photosensitive devices are generally manufactured by semiconductor technology, including photodiodes, phototransistors and photoresistors. Since the light received by the photosensitive device is relatively weak, the photogenerated current generated is also relatively weak. Usually, a preamplifier circuit is required to cooperate with the photosensitive device to amplify the signal. The photosensitive device and the preamplifier circuit are integrated on one chip to form a photoelectric sensor. [0003] With the different applications of photoelectric sensors, various environmental disturbances have a great impact on photosensitive devices, such...

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Problems solved by technology

[0007] The purpose of the present invention is to provide a bipolar PNP transistor and its manufacturing method, to solve the problem that the small current magnification of the existing bipolar PNP transistor cannot be adjusted

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