Interconnection electromigration test structure

Abstract

The invention discloses an interconnection electromigration test structure. The interconnection electromigration test structure comprises a lower-layer structure, an upper-layer structure, a through hole structure and a dielectric medium, wherein the lower-layer structure comprises a first lower-layer structure and a second lower-layer structure; the upper-layer structure is arranged on the lower-layer structure and comprises a first upper-layer current lead wire, a second upper-layer current lead wire and a strip-shaped upper-layer to-be-tested structure, and the first upper-layer current lead wire and the second upper-layer current lead wire are used for providing a voltage for the upper-layer to-be-tested structure; the through hole structure comprises a first through hole structure, a second through hole structure, a third through hole structure and a fourth through hole structure; the first lower-layer structure, the second lower-layer structure, the first upper-layer current lead wire, the second upper-layer current lead wire, the upper-layer to-be-tested structure and the through hole structure are separated in an insulation manner through the dielectric medium. The interconnection electromigration test structure can evaluate the electromigration of the upstream structure accurately, thereby ensuring the accuracy of analysis on the electromigration of the upstream structure.

Description

technical field [0001] The invention relates to the reliability (Reliability) field in the semiconductor manufacturing industry, in particular to an interconnect electromigration test structure. Background technique [0002] Electromigration (EM for short) is a phenomenon of material transfer caused by the gradual movement of ions in a conductor, and its internal mechanism is the transfer of momentum between conductive electrons and diffused metal atoms. For applications with high direct current densities, such as in the field of microelectronics, the electromigration effect is very critical. As the size of integrated circuit products continues to decrease, the practical significance of electromigration effects continues to increase. When electromigration occurs, part of the momentum of a moving electron is transferred to a neighboring activated ion, which causes the ion to leave its original position. Over time, this force causes huge numbers of atoms to move away from th...

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Problems solved by technology

[0004] However, since the feature size of integrated circuits is getting smaller and smaller, especially when it is below 45nm, the thickness of the lower-layer interconnection is getting thinner and thinner, and the gap between the thickness of the upper-layer interconnection and the thickness of the lower-layer interconnection in the interconnection is getting larger and larger. , so that the electromigration test of the upstream structure in the prior art has been unable to truly measure the electromigration of the upper layer structure to be tested 130, such as image 3 As shown, in the electromigration test of the upstream structure, the void is generated at the lower interconnection line at the contact between the lower interconnection line and the via structure, and the electromigration of the upper layer structure to be tested 130 cannot be accurately measured.

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