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Solid-state image sensor, method and electronic device therefor

A solid-state image and sensor technology, used in image communications, electrical solid-state devices, televisions, etc., can solve the problem of impossible to remove signal levels, and achieve the effect of reducing afterimages

Active Publication Date: 2018-05-11
SONY SEMICON SOLUTIONS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it is not possible to properly remove noise from the signal level without using the level prior to transfer of charge to the floating diffusion

Method used

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  • Solid-state image sensor, method and electronic device therefor
  • Solid-state image sensor, method and electronic device therefor
  • Solid-state image sensor, method and electronic device therefor

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Embodiment Construction

[0079] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Note that, in this specification and the drawings, structural elements that have substantially the same function and structure are denoted with the same reference numerals. And repeated descriptions of these structural elements are omitted.

[0080] First, a description is given of global exposure in the prior art.

[0081] For example, a CMOS image sensor is used as a solid-state imaging device including a solid-state image sensor. A CMOS image sensor reads out photocharges accumulated in a pn junction capacitor of a photodiode as a photoelectric transducer through a MOS transistor. Since a CMOS image sensor performs an operation of reading out photocharges accumulated in photodiodes in units of pixels or in units of rows, etc., it is impossible to provide the same exposure period to all pixels during accumulation of photocharges. The...

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Abstract

Provided are a solid-state image sensor, a driving method, and an electronic device, the solid-state image sensor including: a photoelectric conversion section that generates electric charges corresponding to received light and accumulates the electric charges therein; holding the charge accumulated in the photoelectric conversion portion for a predetermined time before area transfer; a first transfer gate which transfers the charge accumulated in the photoelectric conversion portion to the charge holding portion; a second transfer gate , which transfers the charge held in the charge holding portion to the floating diffusion region; and a charge discharge gate, which discharges the charge in the photoelectric conversion portion. Part of the charges accumulated in the charge holding portion is discharged before starting charge accumulation in the photoelectric conversion portion for the next frame.

Description

technical field [0001] The present technology relates to a solid-state image sensor, a method for the solid-state image sensor, and an electronic device, and particularly to a solid-state image sensor that makes it possible to reduce the occurrence of an after-image caused by charge overflow, a method for the solid-state image sensor, and an electronic device for the solid-state image sensor. Sensor method and electronic device. Background technique [0002] For example, a CMOS image sensor is used as a solid-state imaging device including a solid-state image sensor. A CMOS image sensor reads out photocharges accumulated in a pn junction capacitor of a photodiode as a photoelectric transducer through a MOS transistor. Since a CMOS image sensor performs an operation of reading out photocharges accumulated in photodiodes in units of pixels or in units of rows, etc., it is impossible to provide the same exposure period to all pixels during accumulation of photocharges. Theref...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374
CPCH01L27/14609H04N25/621H04N25/616H04N25/771H01L27/14601
Inventor 町田贵志
Owner SONY SEMICON SOLUTIONS CORP
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