Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A high-brightness GaN-based light-emitting diode epitaxial growth method

A technology of light-emitting diodes and epitaxial growth, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of radiation recombination number and quantum confinement effect reduction, luminous intensity reduction, volume increase, etc., to achieve the formation of inhibition, reduction Compensation effect, effect of improving crystal quality

Active Publication Date: 2016-09-14
宁波安芯美半导体有限公司
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the epitaxial layer structure, the Mg-doped PGaN material is used as the P-type material. Usually, the growth temperature of PGaN is 200-400°C higher than the growth temperature of the active region, and the high temperature environment for growing PGaN will damage the active layer InGaN. Larger, so that the InGaN phase segregation is excessive, the volume of the indium-rich and indium-poor regions increases, the number of radiative recombination and the quantum confinement effect are reduced, resulting in a sharp drop in luminous intensity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A high-brightness GaN-based light-emitting diode epitaxial growth method, comprising the following specific steps:

[0031] Step 1: Clean the substrate at a high temperature for 5-20 minutes in a hydrogen atmosphere at 1000-1200°C, and then perform nitriding treatment. The substrate is a material suitable for the growth of GaN-based semiconductor epitaxial materials, such as sapphire, GaN and silicon carbide (SiC ) single crystal, etc.;

[0032] Step 2, lowering the temperature to 500-650°C, growing a low-temperature GaN buffer layer with a thickness of 20-30nm, controlling the growth pressure between 300-760 Torr, and controlling the V / III ratio to 10-1200;

[0033] Step 3: After the growth of the low-temperature GaN buffer layer is completed, the introduction of trimethylgallium (TMGa) is stopped, the substrate temperature is raised to between 900-1200°C, and in-situ thermal annealing is performed on the low-temperature GaN buffer layer , the annealing time is 5-30mi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a high-brightness GaN-based light emitting diode epitaxial growth method. The growth method comprises the following step of dividing into 2 layers, namely a high-temperature P-layer GaN layer (Hp-1) and a high-temperature P-layer GaN layer (Hp-2) for growth in the process of growing a P-layer GaN layer at high temperature. In the high-temperature P-layer GaN, Mg doping adopts uneven growth, and In element doping is contained in the Mg uneven doping growth process, the compensation effect is reduced due to the optimized uneven Mg doping growth method under the low In component condition, the carrier concentration is improved, the formation of P-GaN dislocation is effectively inhibited, the crystal quality is improved, and the service life of a device is improved. Meanwhile, the ionization energy of Mg in the InGaN material is lower than that of the Mg in the GaN, so a higher hole concentration is obtained, the radiation lighting efficiency is improved and the high-brightness light emitting diode can be obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting, in particular to a high-brightness gallium nitride-based light-emitting diode epitaxial growth method. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. LED is currently the most widely used device in the field of semiconductor lighting. Its advantages of high efficiency, energy saving, environmental protection, long life and low power consumption make it have a very good application prospect in the field of dynamic display and industrial lighting. [0003] LED luminous efficiency is one of the most important indicators to measure the quality of LED devices, and improving the extraction efficiency of LED devices has become the main factor to improve luminous efficiency. With the cont...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/0075
Inventor 郭丽彬李刚吴礼清蒋利民
Owner 宁波安芯美半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com