A kind of growth method of large size cui crystal

A growth method and a large-scale technology are applied in a growth field of CuI crystals, which can solve the problems of the growth solvent acetonitrile being toxic, volatile, and difficult to control the crystal growth process, so as to achieve simple and easy device operation, complete crystal shape, completeness and stability. good uniformity

Active Publication Date: 2018-05-11
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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Problems solved by technology

In 2012, their team proposed a new evaporation method for CuI crystal growth, which is an improvement on the traditional evaporation method, coupled with a temperature-programmed process, and finally obtained CuI crystals with a size of about 1cm, but the growth solvent acetonitrile is toxic and volatile
In 2010, Huang Feng, Lin Zhang and other research groups reported a method of hydrothermally growing CuI crystals. The obtained CuI crystals were light yellow hexagonal crystals with a size of only 15mm×10mm×1mm, but the crystal growth process was also difficult to control.

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  • A kind of growth method of large size cui crystal
  • A kind of growth method of large size cui crystal
  • A kind of growth method of large size cui crystal

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Embodiment Construction

[0018] Below in conjunction with specific implementation preferred scheme further illustrate how the present invention is realized:

[0019] 1. Preparation of Growth Seeds

[0020] Spontaneous crystallization and cultivation of seed crystals were carried out by using an aqueous solution cooling method. First, weigh analytically pure NH 4I86.9640g is placed in a 125mL wide-mouth bottle, add 100mL high-purity water, stir at room temperature, and prepare 6M NH 4 I solution. then NH 4 The I (6M) solution was used as the solvent, and the copper sheet was used as the reducing agent. A saturated solution of CuI at 60°C was prepared in a 125mL jar with a paraffin oil seal, sealed with a cap, and crystals were precipitated by natural cooling. The continuous precipitation of crystal grains can be observed 12 hours after the cooling starts, and the grains grow slowly in the next few days, and finally some grains with a size of about 1-2 mm are obtained. Select crystal grains with be...

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Abstract

The invention provides a CuI crystal growth method, which belongs to the field of crystal growth in photoelectric functional material technology. The method uses a low-temperature aqueous solution cooling method to grow crystals, using NH4Cl, NH4Br, NH4I, etc. as cosolvents, copper sheets as reducing agents, paraffin oil seals, growth temperature range of 30-60°C, and cooling rate of 0.1-0.5°C / day. The cooling method crystal growth technology adopted in the present invention has the advantages of low growth temperature, low solution viscosity, simple and easy device, and the growth process can be directly observed. The grown CuI crystal has high purity, good uniformity, and large size. The ultrafast scintillation crystal is expected to play an important role in the future measurement of ultra-high count rate electrons, γ-rays and X-rays. It is also used as a semiconductor material for solar cell materials, superconducting materials and photocatalytic materials.

Description

technical field [0001] The invention relates to the field of crystal growth in photoelectric functional material technology, in particular to a growth method of CuI crystal. Background technique [0002] Cuprous iodide (CuI) has three crystal phases of α, β, and γ. Below 350°C, it is a sphalerite structure (γ-CuI). Both ions are tetrahedral coordination. At 350-392°C, it is Wurtzite structure (β-CuI), when the temperature is higher than 392 ℃, it exists as a cubic structure (α-CuI). Among them, the space group of γ-phase CuI is F-43m, which belongs to the cubic crystal system. It is a p-type semiconductor material with a direct energy gap of 3.leV, a large band gap, good diamagnetism and fast ion conductivity. The opposite spin-orbit splitting, transparent in the visible light range, and the resistivity changes with the change of I-concentration can be used as solar cell materials, superconducting materials and photocatalytic materials. In addition, the low-temperature γ-p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B7/08
Inventor 庄欣欣吕洋洋叶李旺许智煌苏根博
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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