A method for monitoring algan/gan HEMT groove gate etching

Abstract

The invention discloses a method for monitoring AlGaN / GaN HEMT (High Electron Mobility Transistor) concave grating groove etching, wherein the AlGaN / GaN HEMT concave grating groove etching comprises Si3N4 passivation layer etching and AlGaN / GaN layer etching; the monitoring method comprises the steps as follows: after a Si3N4 passivation layer and a AlGaN / GaN layer are etched respectively, the I-V test is implemented for a test tube core for monitoring the concave grating groove etching degree; the current change condition of the test tube core is observed; and the concave grating groove etching condition is judged according to the current change condition. The method is used for effectively monitoring the concave grating groove etching degree and aiding to find out more proper concave grating groove etching conditions, and guarantees the direct-current characteristic, small-signal characteristic and power characteristic of devices.

Description

technical field [0001] The invention relates to the technical field of AlGaN / GaN-based high electron mobility field-effect transistor (HEMT) preparation, in particular to a method for monitoring AlGaN / GaN HEMT groove gate etching. Background technique [0002] In AlGaN / GaN HEMTs, the groove gate etching process plays a decisive role in whether the device can obtain good transconductance characteristics, high current output capability, and good Schottky characteristics. It was found in the experiment that the repeatability and consistency of the groove etching process restrict the stability of the AlGaN / GaN HEMT process, and the difficulties mainly lie in the following points: [0003] 1) The required etching line size is small, the gate length is 0.2 μm, it is difficult to visually observe the topography of the bottom of the gate groove, and it is impossible to accurately control the etching depth. [0004] 2) The required etching depth is shallow, and the etching depth of ...

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Problems solved by technology

[0003] 1) The size of the required etching line is small, and the gate length is 0.2 μm. It is difficult to visually observe the topography of the bottom of the gate groove, and it is impossible to accurately control the etching depth

[0004] 2) The required etching depth is shallow, and the etching depth of the GaN / AlGaN layer is about , the etching time is difficult to control, and the phenomenon of insufficient etching or excessive etching often occurs

[0005] 3) The inconsistency of the epitaxial material greatly hinders the stability of the etching conditions of the groove gate

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