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A kind of preparation method of annular structure thermoelectric device

A thermoelectric device and annular technology, which is applied in the field of preparation of annular structure thermoelectric devices, can solve the problems of no relevant reports, little research on thermoelectric devices, and the infancy stage, etc., to prevent heat loss, ensure mechanical strength, and broaden the scope of application Effect

Active Publication Date: 2016-09-07
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010]However, so far, the research on thermoelectric devices with ring structure is still very little in the world, and it is still in its infancy
So far, only Gao et al. have disclosed the use of Cu as the electrode-connected Bi 2 Te 3 Ring-shaped thermoelectric module (M. Gao and D.M. Luo Wei, "Ring-structured thermoelectric module", Semicond. Sci. Technol. (2007) 22: pages 880–883), its preparation process is relatively complicated
As for the preparation of thermoelectric devices with filled skutterudite-based annular structures, there is no relevant report at present.

Method used

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  • A kind of preparation method of annular structure thermoelectric device
  • A kind of preparation method of annular structure thermoelectric device
  • A kind of preparation method of annular structure thermoelectric device

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preparation example Construction

[0042] See Figure 2 to Figure 6 In the embodiment of the present invention, the preparation method of the ring-shaped thermoelectric device of the present invention includes: placing the first metal connection layer 4 in the groove 12 longitudinally arranged on the inner wall 11 of the hollow mold; inserting the center rod 3 in the mold ; Lay the first thermoelectric material 5, the isolation layer material 6 and the second thermoelectric material 7 in the annular hollow portion between the center rod 3 and the shell 1 of the mold in sequence; sinter the mold; remove the center rod after the sintering is completed 3 and remove the isolation layer material 6 between the first thermoelectric material 5 and the second thermoelectric material 7 to obtain a ring-shaped thermoelectric unit 9; and the inner walls 90 of the plurality of ring-shaped thermoelectric units 9 are connected by a second metal connecting layer 8 To obtain a thermoelectric device with a ring structure.

[0043] ...

Embodiment 1

[0067] First choose the general formula Mo x Cu 1-x The Mo-Cu alloy material is used as the first metal connection layer 4, wherein x (Weight%) is 20≤ x ≤80. Preferably, cold-rolled Mo is used in this embodiment 40 Cu 60 The alloy sheet is used as the first metal connection layer 4, and its thickness may be 0.5 mm.

[0068] The first metal connection layer 4 is pre-processed. The surface of one side of the first metal connection layer 4 can be sandblasted first to remove oxides on the surface and make the surface have a certain roughness to enhance the bonding force between it and the barrier layer. In this sandblasting treatment, the sandblasting pressure can be 0.1-0.5MPa, the sandblasting time can be 30 seconds to 3 minutes, and, for example, high-purity emery can be used for the blasting treatment.

[0069] After the sandblasting process is completed, the first metal connecting layer 4 can be ultrasonically cleaned to remove surface impurities. The solvent used in the ultras...

Embodiment 2

[0079] Compared with Example 1, the main difference of Example 2 lies in the preparation process of the first metal connection layer 4, the first enhanced bonding layer, and the barrier layer (such as image 3 Shown). Therefore, the description of those steps that are the same as those in Embodiment 1 is omitted in the following description.

[0080] This embodiment 2 is still the same as in embodiment 1, using cold-rolled Mo 40 Cu 60 The alloy sheet serves as the first metal connection layer 4, and its thickness may be 0.3 mm.

[0081] On the first metal connection layer 4, a solder layer is placed. The solder layer may be selected from Ag-Cu alloy solder pads. Preferably, the Cu content may be 50%, and the rest is Ag and a small amount of unavoidable impurity elements Bi or Zn; the thickness of the Ag-Cu alloy solder sheet used may be 0.1 mm.

[0082] On the upper surface of the solder layer, a barrier layer with a first enhanced bonding layer is placed. Preferably, Ti foil is s...

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Abstract

A method for preparing a ring-shaped thermoelectric device of the present invention includes: placing the first metal connection layer at a groove provided longitudinally on the inner wall of a hollow mould; inserting a central rod into the mould; The first thermoelectric material, the isolation layer material and the second thermoelectric material are sequentially laid in the annular hollow part between the rod and the shell of the mold; the mold is sintered; after the sintering is completed, the central rod is removed and all The material of the isolation layer between the first thermoelectric material and the second thermoelectric material is used to obtain an annular thermoelectric single couple; and the inner walls of a plurality of said annular thermoelectric single couples are connected with a second metal connection layer to obtain an annular thermoelectric unit device. By adopting the invention, the ring-shaped thermoelectric device can be efficiently prepared.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric conversion, and in particular relates to a method for preparing a ring-shaped thermoelectric device. Background technique [0002] As a new energy and renewable clean energy technology, thermoelectric conversion technology has attracted extensive attention in the world in recent years. Thermoelectric conversion technology uses the Seebeck effect of semiconductor materials to directly convert thermal energy and electrical energy. It has the characteristics of long life, high reliability, environmental friendliness, wide operating temperature range, and effective use of low-density energy. High-tech fields such as waste heat and waste heat recovery from automobile exhaust, high-precision temperature control devices, and military power supplies have significant advantages. [0003] Among many thermoelectric materials, filled skutterudite, as a new type of high-performance medium-temperature (...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34H10N10/01
Inventor 仇鹏飞黄向阳陈立东顾明史迅夏绪贵唐云山王超
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI