Polishing pad

一种研磨垫、研磨层的技术，应用在研磨垫领域，能够解决耗费时间、切割速率低等问题，达到缩短修整时间、提高制造效率的效果

Inactive Publication Date: 2014-04-30
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Abrasive pads containing no foam suffer from low cutting rates during dressing and excessively time-consuming dressing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0185] Hereinafter, although an Example is given and this invention is demonstrated, this invention is not limited to these Examples.

[0186] [the first invention]

[0187] [measurement, evaluation method]

[0188] (Measurement of average bubble diameter)

[0189] What was thinly cut out in parallel with a microtome so that the produced polyurethane resin foam may have a thickness of 1 mm or less was used as a sample for the average cell diameter measurement. The sample was fixed on a slide glass, and it observed at 100 times using SEM (S-3500N, Hitachi Scientific Systems Co., Ltd.). Using image analysis software (WinRoof, Mitani Trading Co., Ltd.), the obtained image was measured for all bubble diameters in an arbitrary range, and the average bubble diameter was calculated.

[0190] (Determination of Independent Cell Rate)

[0191] First, the open cell ratio was measured according to the ASTM-2856-94-C method. However, what laminated|stacked 10 circular-punched polyuret...

manufacture example 1

[0210] (synthesis of prepolymer)

[0211] Add 1229 parts by weight of toluene diisocyanate (2,4-body / 2,6-body=80 / 20 mixture), 272 parts by weight of 4,4'-dicyclohexylmethane diisocyanate, 1901 parts by weight Polytetramethylene ether glycol with a molecular weight of 1018 and 198 parts by weight of diethylene glycol were reacted at 70° C. for 4 hours to obtain an isocyanate-terminated prepolymer A (NCO concentration: 2.22 meq / g).

[0212] Similarly, 204 parts by weight of toluene diisocyanate (2,4-body / 2,6-body=80 / 20 mixture), 596 parts by weight of polytetramethylene ether glycol with a number average molecular weight of 1018 are added in the container, The reaction was carried out at 70° C. for 4 hours to obtain an isocyanate-terminated prepolymer B (NCO concentration: 1.48 meq / g).

Embodiment 1

[0214] Add 100 parts by weight of the isocyanate-terminated prepolymer A, 2.4 parts by weight of ethylene glycol monophenyl ether (hydroxyl equivalent to 1 equivalent of isocyanate group: 0.080) and 3 parts by weight of silicon-based surfactant ( Goldschmidt Co., Ltd. make, B8465) was mixed, and it adjusted to 80 degreeC and degassed under reduced pressure. Then, stirring was vigorously performed for about 4 minutes using a stirring blade at a rotation speed of 900 rpm so as to introduce air bubbles into the reaction system. 24.1 parts by weight of 4,4'-methylene bis(o-chloroaniline) (manufactured by Anhara Chemical Co., Ltd., Ihara Curemin MT) previously melted at 120° C. was added thereto. After stirring this liquid mixture for about 1 minute, it poured into the flat-bottomed open mold (cast container). When the fluidity of the liquid mixture disappeared, it was placed in an oven, and post-cured at 110° C. for 6 hours to obtain a polyurethane resin foam block.

[0215] The...

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Abstract

The purpose of the present invention is to provide: a polishing pad which has improved dressing properties, while maintaining the hardness; or a polishing pad which does not easily make a scratch on the surface of an object to be polished, while having improved dressing properties. A polishing pad of the present invention is characterized by having a polishing layer that is formed of a polyurethane resin foam or an unfoamed polyurethane resin, and is also characterized in that the polyurethane resin foam or the unfoamed polyurethane resin contains, as starting material components, (A) an isocyanate component, (B) a polyol component and (C) an aromatic compound that has one hydroxyl group and / or an aromatic compound that has one amino group.

Description

technical field [0001] The present invention relates to a polishing pad capable of stably and efficiently planarizing optical materials such as lenses and mirrors, silicon wafers, aluminum substrates, and general metal polishing processes requiring high surface flatness. The polishing pad of the present invention is particularly suitable for the step of planarizing silicon wafers and devices on which oxide layers, metal layers, etc. are formed, before lamination and formation of these oxide layers or metal layers. [0002] In addition, the present invention also relates to a polishing pad (for rough polishing or finishing polishing) used when polishing the surfaces of optical materials such as lenses and mirrors, silicon wafers, and aluminum substrates. In particular, the polishing pad of the present invention is suitably used as a polishing pad for finishing. Background technique [0003] As a representative material requiring a high degree of surface flatness, a single-cr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/24C08G18/28H01L21/304C08G101/00
CPCC08G18/797C08G18/724C08G18/4854C08G18/4277C08G18/2835B24B37/24C08G18/4018C08G18/664C08G18/792C08G18/12C08G2101/00B24B37/042C08G18/3206C08G18/3243C08G18/3814C08G18/6674C08G18/758C08G18/7621H01L21/304
Inventor 佐藤彰则堂浦真人
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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