OPC (Optical Proximity Correction) verification method and method for preparing mask

A verification method and pattern technology, applied in the field of mask preparation and OPC verification, can solve problems such as changes in the electrical properties of devices, and achieve the effects of improving the manufacturing process, saving time and investing capital, and optimizing the design process.

Inactive Publication Date: 2014-05-07
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0005] The purpose of the present invention is to provide an OPC verification method and a mask preparation method to solve the problem in the prior art that the verification of OPC cannot detect changes in the electrical properties of the device

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  • OPC (Optical Proximity Correction) verification method and method for preparing mask
  • OPC (Optical Proximity Correction) verification method and method for preparing mask
  • OPC (Optical Proximity Correction) verification method and method for preparing mask

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Embodiment Construction

[0027] The OPC verification method and the mask preparation method provided by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form, and are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0028] Please refer to Figure 2~Figure 4 , provide the pattern after OPC; calculate the AEI (After Etch Inspection) pattern according to the pattern after OPC, that is, the structure displayed on the silicon wafer after etching, and mark the area exceeding the error of the target value, and the error of the target value can be Set by process requirements or industry experience. In order to be able to operate effectively, it is also necessary to calculate the...

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Abstract

The invention discloses an OPC (Optical Proximity Correction) verification method and a method for preparing a mask. The method comprises the following steps: providing a pattern subjected to OPC, calculating an AEI (After Etch Inspection) outline and marking an area beyond the target value error according to the pattern subjected to OPC, performing device simulation, detecting the electrical property of the simulated device, judging the advantages and disadvantages of the pattern subjected to OPC, and preparing the mask on the basis. The verification of the OPC is introduced into the aspect of directly detecting the electrical property of the device, photoetching variation with a bad effect on the production of the device can be captured, and a good foundation is laid for manufacturing a high-quality device. Meanwhile, the weak design spot can be caught according to the detection on the electrical property, and continuous improvement of a mask manufacturing process is promoted, so that the design process is effectively optimized, and the time and investment are greatly saved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to an OPC verification method and a mask plate preparation method. Background technique [0002] The production and manufacture of integrated circuits is a very complicated process. Among them, lithography technology is one of the most complicated technologies, and it is also an important driving force to promote the development of integrated circuit technology. The strength of lithography technology directly determines the performance of chips. [0003] However, there is an important problem now: due to the nature of light, lithographic variations (Litho variations) will inevitably occur, for example, for the contact layer, it will cause via holes and polysilicon (Polysilicon) ) changes, the shape of the via hole itself will also be affected, and the area of ​​the via hole will change, which will have a certain impact on the device's saturation current (Saturation Cu...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36
Inventor 张婉娟
Owner SEMICON MFG INT (SHANGHAI) CORP
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