Plasma device and workpiece position detection method

Abstract

The invention discloses a plasma device and a workpiece position detection method. The plasma device includes a reaction cavity, and an electrostatic chuck, a centre and an electrostatic power supply, which are located in the reaction cavity. The plasma device also includes a sensor, a result judgment unit and a result processing unit, wherein the sensor includes a sending module used for sending sensing signals and a receiving module corresponding to the sending module. The result judgment unit is used for judging whether the workpiece is jacked up by the centre normally according to the sensing signals of the sensor. The result processing unit executes processing procedures according to the judgment result of the result judgment unit. Through the plasma device and the workpiece position detection method, whether the workpiece rises normally can be known timely in a manufacturing process and conditions of bad pieces or broken pieces, which may happen when a piece sticking phenomenon happens are reduced and a possibility that damages are caused on a mechanical arm is reduced.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a plasma device and a workpiece position detection method. Background technique [0002] In the semiconductor industry and technology, plasma etching equipment is usually used to achieve etching of wafers. In order to provide production capacity and achieve effective control of the wafer during the semiconductor process, semiconductor processing equipment can usually use the electrostatic adsorption force between the electrostatic chuck and the wafer during the semiconductor process to adsorb the wafer on the electrostatic chuck for wafer processing. etching and other processes. The electrostatic chuck includes thimbles, which can complete the seating and unseating process of the wafer on the electrostatic chuck; in addition, the electrostatic chuck is provided with an air circuit that can be used to blow the wafer, thereby controlling the temperature of the electrostatic chuck at su...

AI Technical Summary

Problems solved by technology

Sometimes, due to the incomplete electrostatic discharge of the electrostatic chuck 102, the wafer 107 is subjected to different adsorption forces from various parts of the electrostatic chuck 102, thus causing the wafer 107 to be in a non-horizontal state and slightly tilted.

However, in the automated production process of wafer processing, since the lifting of the thimble and the deep removal of the robot arm are continuous actions, when the surface of the wafer 107 tilts toward the robot arm due to chip sticking, it will cause damage to the robot arm and crush the wafer 107 The situation occurs, and leads to the reduction of production efficiency and the increase of production cost

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