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Nitride semiconductor light-emitting element

A technology of nitride semiconductors and light-emitting devices, applied in semiconductor devices, electrical components, circuits, etc., to achieve the effect of improving light extraction efficiency

Inactive Publication Date: 2014-05-07
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technique of using a non-uniform pattern to reduce the total reflection of light helps to improve the light extraction efficiency to some extent, but a structure that further improves the light extraction efficiency is still needed

Method used

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  • Nitride semiconductor light-emitting element
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Embodiment Construction

[0031] Exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0032] This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the shapes and dimensions of elements may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or like elements.

[0033] figure 1 is a schematic perspective view showing a nitride semiconductor light emitting device according to a first exemplary embodiment of the present invention, figure 2 is shown taken along the XX' line figure 1 The side sectional view of the nitride semiconductor light emitting device shown.

[0034] refer to figure 1 and figur...

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Abstract

The present invention relates to a nitride semiconductor light-emitting element having improved light extraction efficiency due to a texture effect, comprising: a light-emitting structure which is formed on a substrate and includes a first conductive nitride semiconductor layer, a second conductive nitride semiconductor layer, and an active layer interposed therebetween; a first electrode electrically connected to the first conductive nitride semiconductor layer; a second electrode electrically connected to the second conductive nitride semiconductor layer; and a light extraction pattern having a plurality of through-holes positioned between the first and second electrodes and being formed to penetrate upper and lower surfaces of the light-emitting structure.

Description

technical field [0001] The present invention relates to a nitride semiconductor light emitting device, and more particularly, to a nitride semiconductor light emitting device having improved light extraction efficiency through a texture effect. Background technique [0002] A semiconductor light emitting device is a semiconductor device capable of emitting light of various colors by electron-hole recombination at a p-n junction between a p-type semiconductor and an n-type semiconductor when a current is applied thereto. For filament-based light emitting devices, semiconductor light emitting devices have various advantages such as relatively long lifetime, relatively low power consumption, superior initial operation characteristics, high resistance to vibration, high tolerance to repeated interruption of power etc.; thus, the demand for semiconductor light emitting devices is increasing. In particular, recently, the growth of Group III nitride semiconductors capable of emitt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/08H01L33/20
CPCH01L33/14H01L33/20
Inventor 黄硕珉韩在镐金载润河海秀李守烈金制远
Owner SAMSUNG ELECTRONICS CO LTD