Formation method of self-aligned triple pattern
A self-aligning, patterning technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of inability to further reduce and size restrictions, and achieve feature size reduction, easy control, location and feature size. precise effect
Active Publication Date: 2017-09-22
SEMICON MFG INT (SHANGHAI) CORP
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0009] However, the size of the mask formed by the self-aligned double patterning process of the prior art is still limited and cannot be further reduced
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0034] As mentioned in the background, the size of the mask formed by the self-aligned triple patterning process in the prior art is still limited and cannot be further reduced.
[0035] After research by the inventor of the present invention, please continue to refer to figure 2 , the mask formed by the existing self-aligned double patterning process is: in the range where the existing photolithography process can only form a single sacrificial layer 101, the mask sides are respectively formed on both sides of the sacrificial layer 101 wall 103; wherein, the size of the sacrificial layer 101 is limited by the precision of the existing photolithography process, and its size cannot be further reduced; when the mask spacer 103 is formed on both sides of the sacrificial layer 101, it is Within the scope of forming a single sacrificial layer 101, double the number of mask spacers 103 is formed, so the size of the mask spacers 103 is further reduced compared with the size of the e...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Provided is a method for forming a self-aligned triple pattern. The method comprises: providing a layer to be etched, wherein the surface of the layer to be etched is equipped with a discrete first sacrificial layer; forming a second sacrificial film on the surface of the layer to be etched and the sidewall and the top of the first sacrificial layer and forming a first sidewall layer on the surface of the second sacrificial film; planarizing the second sacrificial film and the first sidewall layer until the top surface of the first sacrificial layer is exposed, the first sidewall layer forms a first sidewall, the second sacrificial film forms a second sacrificial layer, and the tops surfaces of the second sacrificial layer and the first sidewall are aligned to the top surface of the first sacrificial layer; removing the first sacrificial layer after a planarization process is executed; forming a second sidewall on the surface of the layer to be etched on the two sides of the second sacrificial layer and the first sidewall; dry etching the second sacrificial layer by using the first sidewall and the second sidewall as a mask until the surface of the layer to be etched is exposed. A formed self-aligned triple pattern has a small size and a simple forming process.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a self-aligned triple pattern. Background technique [0002] With the continuous progress of semiconductor technology, the process nodes of semiconductor devices are continuously reduced. However, due to the limitation of the precision of the existing photolithography process, the mask pattern formed by the existing photolithography process is difficult to meet the demand for continuous reduction of the feature size of semiconductor devices, which hinders the development of semiconductor technology. [0003] In order to further reduce the size of the semiconductor device on the basis of the existing photolithography process, a double patterning process is proposed in the prior art. Among them, especially the self-aligned double patterning (Self-Aligned Double Patterning, SADP) process is widely used because of its simple process. [0004...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/033H01L21/308
CPCH01L21/0337H01L21/0338H01L21/3086H01L21/3088
Inventor 隋运奇
Owner SEMICON MFG INT (SHANGHAI) CORP