Chemical mechanical polishing operating method

Abstract

The invention discloses a chemical mechanical polishing operating method. The chemical mechanical polishing operating method includes that: using a monocrystalline silicon or polycrystalline silicon growth silicon wafer as a guide piece, wherein the guide piece is a dummy wafer which enables each performance index of a machine to arrive at a stable standard before operating; optimizing a polishing form, to be specific, optimizing to enable the surface of the repeatedly used guide piece to still have a diameter more than 0.20 micrometers and a particle number less than 50, cleaning the polishing guide piece in a cleaning brush opening mode, and closing the cleaning brush when operating the product so as to avoid the product particle increase due to the poor guide piece particle condition.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a chemical mechanical grinding operation method. Background technique [0002] Chemical Mechanical Polishing (CMP: Chemical Mechanical Polishing) is one of the key processes in semiconductor manufacturing. It is a removal process that achieves its purpose by combining chemical reactions and mechanical polishing. And we use it in the semi-conductive thin-film body process, and use it to peel off the film to make the surface smoother and more flat. It is also used in the metallization process of semiconductors to remove a large amount of metal film on the surface to form in-line plugs or metal lines in the dielectric film. And when the wafer is cut from the monocrystalline silicon ingot, many process steps are used to prepare a flat, bright and defect-free silicon wafer to meet the requirements of the integrated circuit process, and the chemical mechan...

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Problems solved by technology

Particles in poor condition throughout the product

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