Unlock instant, AI-driven research and patent intelligence for your innovation.

Microcurrent detection circuit

A detection circuit, micro-current technology, applied in the direction of measuring current/voltage, measuring device, measuring electrical variables, etc., can solve the problems of inability to isolate input capacitance, large parasitic capacitance of photodiode, insufficient gain and bandwidth, etc.

Inactive Publication Date: 2014-07-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the traditional micro-current detector, due to the large parasitic capacitance of the photodiode, the input capacitance cannot be isolated, so there are problems of insufficient gain and bandwidth.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microcurrent detection circuit
  • Microcurrent detection circuit
  • Microcurrent detection circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Below in conjunction with the accompanying drawings and embodiments, the technical solutions of the present invention are described in detail:

[0017] like figure 1 As shown, the micro-current detection circuit of the present invention includes a photodiode, a transimpedance amplifier, a level shift circuit, a differential amplifier, a comparator and a buffer which are connected in sequence.

[0018] like figure 2 As shown, the transimpedance amplifier is composed of resistors R1, R2, R3, R4 and NMOS transistors M1 and M2; the drain of M1 is connected to the power supply VDD through R1, its gate is connected to VSS through R3 and R4 in turn, and its source is connected to the ground VSS; the gate of M2 is connected to the drain of M1, its drain is connected to the power supply VDD through R2, and its source is connected to VSS through R4;

[0019] The cathode of the photodiode is connected to the power supply VDD, and the anode of the photodiode is connected to the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of electronic circuits, in particular to a high-speed microcurrent detection circuit which comprises a photodiode, a trans-impedance amplifier, a level shifting circuit, a differential amplifier, a comparator and a buffer which are connected in sequence. The microcurrent detection circuit has the advantages that delay time can be decreased within 10ns, spurious triggering of the circuit caused by different effects of disturbance on a reference circuit and a detection circuit can be avoided effectively, shaping can be performed on a voltage signal, speed is increased further, and capability in load driving is improved.

Description

technical field [0001] The invention relates to the technical field of electronic circuits, in particular to a high-speed micro-current detection circuit. Background technique [0002] In high-speed optical fiber communication, the photodiode generates a weak current signal after receiving the light, and the front-end circuit converts it into a voltage signal and amplifies the output. The performance of the micro-current detection circuit of the front stage has a crucial influence on it. Its core is to detect the tiny current generated by the photocell through the transimpedance amplifier, and convert it into a voltage signal to amplify the output. The transimpedance amplifier is the key structure of the pre-stage detection circuit. In order to prevent the signal from being affected by the post-stage noise and increase the bit error rate, usually the pre-stage amplifier needs a higher gain. On the other hand, the micro-current detection circuit requires a high response spe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/00
Inventor 周泽坤张瑜董渊石跃明鑫王卓张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More