Oxide thin film transistor structure and method for producing same

Abstract

The invention discloses an oxide thin film transistor and a method for producing same. The oxide thin film transistor structure comprises a substrate, and a drain electrode is disposed on the substrate. A first insulating layer is disposed on the substrate and the drain electrode. A drain electrode surface having a first opening so as to be partially exposed is disposed on the first insulating layer. A gate electrode and a gate insulating layer are sequentially disposed on the first insulating layer and on two sides of the first opening. A metal oxide channel layer is disposed on the gate insulating layer and in the first opening. A source electrode is disposed on the metal oxide channel layer. The corresponding position in the metal oxide channel layer to the first opening is taken as a channel region.

Description

technical field [0001] The present invention relates to a transistor structure and a manufacturing method thereof, in particular to a structure of an oxide thin film transistor and a manufacturing method thereof. Background technique [0002] In recent years, flat panel displays have developed more and more rapidly, and have gradually replaced traditional cathode ray tube displays. Today's flat panel displays mainly include the following types: Organic Light-Emitting Diodes Display (OLED), Plasma Display Panel (PDP), Liquid Crystal Display (LCD), and Field Emission Display (Field Emission Display). Display, FED), etc. The thin film transistor (Thin Film Transistor, TFT), which controls the on and off of each pixel in these flat panel displays, is one of the key elements in these flat panel displays. [0003] figure 1 A schematic cross-sectional view of a known metal oxide thin film transistor structure is shown. Such as figure 1 As shown, the known metal oxide thin film...

AI Technical Summary

Problems solved by technology

However, it is known that the metal oxide layer 104 below the source 105 and the drain 106 is often corroded by the metal etchant when the lithographic etching process of the source 105 and the drain 106 is performed on the metal oxide thin film transistor 100. The situation that caused the disconnection

Moreover, the UV light used in the photolithographic etching process will affect the electrical properties of the metal oxide layer 104.

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