Infrared focal plane detector capable of improving photoelectric conversion performance
An infrared focal plane, photoelectric conversion technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of complex nature, increase production cost and loss, and change, and achieve no damage to the device, strong practicability, and reduced size. The effect of photovoltaic
Inactive Publication Date: 2014-07-09
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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The main reason is that electrode growth is generally a post-processing process for detectors. However, the properties of infrared detection materials, especially narrow-bandgap infrared semiconductor materials, are very complex, changeable and fragile, and the energy band structure at the surface and interface is easily affected by the above-mentioned process. Therefore, the device failure caused by electrode fabrication will greatly increase the production cost and loss
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[0027] An infrared focal plane detector with improved photoelectric conversion performance, its structure is as follows figure 1 As shown, it includes a focal plane photosensitive element located on the backlight surface of the chip center, an n-type metal electrode 1 connected to the photosensitive element, a common electrode 4 made of p-type semiconductor material surrounding all photosensitive elements, and a substrate 5 arranged on the back of the common electrode The n-type metal electrode 1 is heavily doped to form an ohmic contact with the n+ type semiconductor material 3 , and the contact surface between the n-type metal electrode 1 and the common electrode 4 is provided with a passivation layer 2 .
[0028] In addition, a light-shielding plate 6 is also included, which is located on the light-facing surface of the back of the common electrode 4, and blocks the incident infrared light from irradiating the light-facing surface of the common electrode, so that the inciden...
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The invention relates to an infrared focal plane detector capable of improving the photoelectric conversion performance. The infrared focal plane detector capable of improving the photoelectric conversion performance comprises focal plane photosensitive elements located on the backlight face in the center of a chip, n-type metal electrodes connected with the photosensitive elements and common electrodes made of p-type semiconductor materials, wherein the photosensitive elements are surrounded by the common electrodes. The infrared focal plane detector further comprises light shields located on the light-facing faces of the common electrodes, and incident infrared light is prevented from being emitted to the light-facing faces of the common electrodes, so that incident light enters the infrared focal plane detector through holes of the light shields. Compared with the prior art, under the condition that the basic structure of an infrared focal plane module is kept, only a layer of light shields need to be additionally arranged outside the infrared focal plane module, so that the infrared focal plane detector capable of improving the photoelectric conversion performance is simple, convenient to use, free of damage to devices and practical.
Description
technical field [0001] The invention belongs to the field of electronic science and technology, in particular to an infrared focal plane detector with improved photoelectric conversion performance. Background technique [0002] At present, the most significant development trend of infrared detectors is the rapid development of optical-mechanical scanning imaging technology to staring imaging technology. The key to this development is that the core components are upgraded from unit devices to focal plane devices. All developed countries are investing huge human and financial resources in the development of infrared focal plane array (IRFPA) technology. In our country, not only in resource exploration, environmental monitoring, disaster forecasting, etc., but also in the field of military defense related to national security, the need for infrared focal plane is particularly urgent. [0003] High-performance and large-scale infrared focal plane array technology has become th...
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IPC IPC(8): H01L31/103H01L31/0232
CPCH01L31/02327H01L31/103
Inventor 崔昊杨王佳林王超群刘璨许永鹏曾俊冬杨俊杰唐忠
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER