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A light emitting diode and its manufacturing method
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A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of high cost, complex process, low yield, etc., and achieves the goal of improving yield, improving heat dissipation efficiency, and reducing the difficulty of the process. Effect
Active Publication Date: 2017-05-24
EPILIGHT TECH
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Problems solved by technology
[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a light-emitting diode and its manufacturing method, which is used to solve the problem of wafer-level manufacturing of flip-chip LED chips in the prior art, insufficient heat dissipation efficiency, and technical problems. Problems such as complexity, high cost and low yield
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Embodiment 1
[0087] Such as Figure 1a As shown, this embodiment provides a light emitting diode, the light emitting diode at least includes:
[0088] A thermally and electrically conductive substrate 112, the lower surface of which is combined with a P electrode 113, and the upper surface is combined with a bonding layer 111;
[0089] a mirror 108, combined with the bonding layer 111;
[0090] A light-emitting epitaxial structure, combined with the reflector 108, including a P-type layer 105, a quantum well layer 104, and an N-type layer 103 stacked in sequence;
[0091] A sapphire substrate 101, combined with the light-emitting epitaxial structure;
[0092] a contact area, penetrating from the sapphire substrate 101 to the bonding layer 111;
[0093] N electrodes 109 and 115 electrically connect the N-type layer 103 to the surface of the sapphire substrate 101 through the contact area;
[0094] The passivation layer 110 is filled between the N electrode in the contact region and the ...
Embodiment 2
[0109] Such as Figure 1b As shown, this embodiment provides a light-emitting diode, the basic structure of which is as in Embodiment 1, wherein the connection surface between the N electrode preparation platform 106 and the sapphire substrate 101 is a vertical surface perpendicular to the sapphire substrate 101. noodle.
Embodiment 3
[0111] This embodiment provides a method for manufacturing a light emitting diode, comprising the following steps:
[0112] Such as Figure 2~Figure 3 As shown, step 1) is performed firstly, a sapphire substrate 101 is provided, and a plurality of light-emitting unit regions are defined, and at least one groove structure 102 is etched in each light-emitting unit region.
[0113] Specifically, a plurality of light-emitting units are defined in the sapphire substrate 101 at the wafer level, and then a photoresist pattern is formed on the surface thereof, and then the surface of the sapphire substrate 101 is etched by an inductively coupled plasma ICP etching method. The groove structure 102 is etched out. In this embodiment, the groove structure 102 is a tapered hole or a V-shaped groove. Of course, in other embodiments, the groove structure 102 can also be a cylindrical hole structure, a circular truncated structure, a groove structure with a trapezoidal cross section, a groov...
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Abstract
The invention provides an LED and a manufacturing method thereof. The LED comprises a heat and electricity conducting substrate, a reflecting mirror, a light-emitting epitaxial structure, a sapphire substrate, a contact region, an N electrode and a passivation layer, wherein a bonding layer and a P electrode are arranged on the upper surface and the lower surface of the heat and electricity conducting substrate respectively, the light-emitting epitaxial structure comprises a P-type layer, a quantum well layer and an N-type layer which are stacked, the sapphire substrate is combined on the light-emitting epitaxial structure, the contact region penetrates into the bonding layer from the sapphire substrate, the N electrode enables the N-type layer to be electrically connected to the surface of the sapphire substrate by the aid of the contact region, and the contact region is filled with the passivation layer. According to the novel inverted LED structure, the wafer level bonding technology is adopted so that an inverted LED chip can be manufactured, the LED chip is directly bonded in the heat and electricity conducting substrate, and thus the radiating efficiency of the LED chip is greatly improved; a groove structure is formed in the sapphire substrate first, then epitaxy is conducted, at last, the N electrode is exposed by thinning, the defect that fragments can occur easily in subsequent processing is overcome, the technology difficulty is lowered, and the yield of products is effectively improved.
Description
technical field [0001] The invention belongs to the field of semiconductor lighting, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes LEDs are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and it...
Claims
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