Method for measuring diode transient temperature rise in real time

Abstract

The invention relates to a method for measuring the diode transient temperature rise in real time. The method includes the steps of firstly conducting I-V characteristic measurement on a measured diode at different temperatures to obtain an I-V characteristic curve, wherein electric currents applied to the diode are narrow pulse electric currents, and the self temperature rise of the diode can be avoided; then obtaining a curve of the relation between voltages under different electric currents and temperature changes according to the I-V characteristic curve; then collecting a relation, between the voltages under different electric currents and time changes, of the diode through semiconductor parameter analysis meters; finally obtaining the diode transient temperature rise in cooperation with the prior-obtained curve of the relation between the voltages under the different electric currents and the temperature changes. By means of the method, a switch-free measuring device is adopted for measuring the diode transient temperature rise in real time; compared with an existing measurement method related to a switching device with a switch, temperature rise errors caused by switching delaying are eliminated. Meanwhile, the narrow pulse electric currents generated by graphic instruments are small enough in pulse width, influences of the diode self temperature rise on the temperature rise can be effectively avoided, and the measurement accuracy is greatly improved.

Description

technical field [0001] The invention belongs to the field of electronic device testing and relates to a method for measuring and analyzing the transient temperature rise of a diode. technical background [0002] At present, semiconductor devices are constantly developing in the direction of small size and high integration. At the same time, power diodes need to work under different high-current voltage pulses or switching conditions. The transient power density of the device is high, and the transient temperature rises, resulting in a decrease in device characteristics, reduced reliability, and shortened life. In order to accurately evaluate its reliability, it is particularly important to accurately measure the transient temperature rise of the device. [0003] The transient temperature rise test of diodes mostly adopts the electrical method. The relevant standards mainly include the national military standard 128A-973103, the US military standard MIL-STD-750E3101.4, etc.,...

AI Technical Summary

Problems solved by technology

There will be a time delay during the switching process of the working current and the test current. Experiments have shown that a time delay of 1us may cause a temperature change of more than 200°C

However, the switching speed of the device itself is relatively fast, and the delay time of the current equipment is generally 1-10us, which is not suitable for the measurement of the transient temperature rise of the device under the pulse working condition.

Images