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Package with metal-insulator-metal capacitor and method of manufacturing the same

A metal capacitor, capacitor technology, applied in semiconductor/solid-state device manufacturing, capacitors, semiconductor devices, etc., can solve problems such as limitations

Active Publication Date: 2017-10-13
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For increasingly complex mixed-signal and RF applications, MIM capacitor area is limited by die size parameters

Method used

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  • Package with metal-insulator-metal capacitor and method of manufacturing the same
  • Package with metal-insulator-metal capacitor and method of manufacturing the same
  • Package with metal-insulator-metal capacitor and method of manufacturing the same

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Embodiment Construction

[0026] It is understood that the following disclosure provides many different embodiments, or examples, for implementing different components of various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. However, this invention may be embodied in many different forms and should not be construed as limited to the implementations set forth herein; rather, these embodiments are provided so that this specification will be thorough and complete, and will fully convey the invention to those skilled in the art. Those ordinary technicians. It may be evident, however, that one or more embodiments may be practiced without these specific details.

[0027] In the drawings, the thickness and width of layers and regions are exaggerated for clarity. Like reference numbers in the drawings indicate like elements. Elements and regions shown in the drawings are schematic in nature and thus relative dimensions or spacing shown ...

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Abstract

Packages with metal-insulator-metal capacitors and methods of making the same are disclosed. Specifically, the present invention discloses a package including a chip having a metal-insulator-metal (MIM) capacitor formed in a first polymer layer and metal pillars formed on the MIM capacitor. The molding compound surrounds the chip, the second polymer layer is formed on the chip and the molding compound, the third polymer layer is formed on the second polymer layer, and the interconnect structure is formed between the second polymer layer and the third polymer layer And is electrically connected with the metal pillar and the MIM capacitor, and the bump is formed over and electrically connected with the interconnection structure.

Description

technical field [0001] The present invention relates to packages and methods of making the same, and more particularly, to packages having metal-insulator-metal (MIM) capacitors and methods of making the same. Background technique [0002] Radio frequency (RF) and mixed-signal integrated circuits utilize capacitor elements for decoupling, filtering and oscillation. Metal-insulator-metal (MIM) capacitor structures have been used as capacitors in analog, mixed-signal, and RF devices due to the advantage that metals provide depletion-free, high-conductivity electrodes suitable for high-speed applications at low cost. The MIM capacitor structure has the advantage of the flexibility to insert it between two intermediate metal layers. For increasingly complex mixed-signal and RF applications, MIM capacitor area is limited by die size parameters. Contents of the invention [0003] In order to solve the problems existing in the prior art, according to one aspect of the present i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L23/31H01L21/56H01L21/768H10N97/00
CPCH01L24/19H01L23/5223H01L23/525H01L24/96H01L24/97H01L2224/12105H01L2224/97H01L2924/18162H01L2924/181H01L2924/19041H01L2924/19104H01L2224/04105H01L28/40H01L28/60H01L2224/82H01L2924/00H01L27/1255H01L21/4853H01L21/565H01L21/78H01L25/50
Inventor 余振华侯上勇邱文智洪瑞斌叶德强叶炅翰
Owner TAIWAN SEMICON MFG CO LTD