Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memristor hyperchaos system and circuit with abundant dynamic behaviors

A chaotic system and dynamics technology, applied in logic circuits, electrical components, pulse technology, etc., can solve the problems of large volume and high power consumption of chaotic systems

Inactive Publication Date: 2014-08-27
SOUTHWEST UNIVERSITY
View PDF3 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the chaotic system contains nonlinear parts. If the chaotic system is designed with existing components, it will generate large power consumption and the volume of the chaotic system will be relatively large.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memristor hyperchaos system and circuit with abundant dynamic behaviors
  • Memristor hyperchaos system and circuit with abundant dynamic behaviors
  • Memristor hyperchaos system and circuit with abundant dynamic behaviors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] The present invention will be further described below in conjunction with the drawings and specific embodiments.

[0045] The dimensionless equation of the chaotic system proposed by the present invention is:

[0046] dx dτ = z dy dτ h + u dy dτ = a + w + bf ( - | x | ) du dτ = g 1 ( y ) dz dτ = - cz - du - ew + fg 2 ( x ) - - - ( 1 )

[0047] In the formula, a, b, c, d, e, f and h are constants, and c=d=e=f=0.5 are fixed coefficients, and the chaotic attractors obtained by setting different values ​​of a, b and h are different . There are three nonlinear terms in the formula. Through the derivation in the literature (Lidan Wang. MEMRISTOR MODEL AND ITS APPLICATION FOR CHAOS GENERATION. International Journal of Bifurcation and Chaos World Scientific Publishing Company), we can get the electromagnetic controlled memristor mod...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a memristor hyperchaos system and circuit with abundant dynamic behaviors. The new fifth-order memristor hyperchaos system is provided and has the abundant chaos dynamic behaviors and phase track graphs at different angles, and the different chaos behaviors such as grids and scrolls can be seen. A basic step for generating a complex dynamic chaos system through a memristor in future is made.

Description

Technical field [0001] The invention relates to a chaotic system and circuit. Background technique [0002] Memristor is a kind of non-linear resistor with memory function. It represents the relationship between electric charge and magnetic flux, and has the function of "remembering" the previous current. It was first proposed by Professor Shaotang Tsai of the University of California, Berkeley in 1971. Until May 2008, scientists at HP Labs wrote in the journal Nature that they successfully developed the world's first memristor. The existence of the memristive element increases the basic elements of circuit design from resistance, capacitance and inductance to four. The memristor provides a new development space for circuit design and its memristive circuit application. [0003] Since the first chaotic system was discovered by Lorenz in 1963, the study of chaos has continued to go deeper and more valuable. It is increasingly playing an important role in different fields. However...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/00
Inventor 李慧芳王丽丹段书凯
Owner SOUTHWEST UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com