Fin-fet device with body contact and method of forming the fin-fet device with body contact

Abstract

Fin field-effect transistor devices and methods of forming the fin field-effect transistor devices are provided herein. In an embodiment, a fin field-effect transistor device includes a semiconductor substrate that has a fin. A gate electrode structure overlies the fin. Source and drain halo and / or extension regions and epitaxially-grown source regions and drain regions are formed in the fin and are disposed adjacent to the gate electrode structure. A body contact is disposed on a contact surface of the fin, and the body contact is spaced separately from the halo and / or extension regions and the epitaxially-grown source regions and drain regions.

Description

technical field [0001] The present invention generally relates to a fin field effect transistor (fin FET) device and method of forming the same, and more particularly to a fin FET device having a body contact and forming the fin FET device having the body contact. A method for fin FET devices. Background technique [0002] Transistors, such as metal oxide semiconductor field effect transistors (MOSFETs) or just field effect transistors (FETs), are the core building blocks of most semiconductor integrated circuits (ICs). A FET contains source and drain regions between which current can flow through a channel affected by a bias voltage applied to a gate electrode over the channel. Some semiconductor ICs (eg, high performance microprocessors) can contain millions of FETs. For such ICs, reducing transistor size, and thus increasing transistor density, has long been a top priority for the semiconductor manufacturing industry. However, semiconductor performance must be maintain...

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Problems solved by technology

However, this approach is not compatible with a replacement metal gate (RMG) process, thus requiring that the epitaxial silicon be isolated from the contact area of ​​the multi-gate of the bulk silicon of the semiconductor substrate, and that the bulk contact also be separated from The fin is physically isolated without direct contact with the fin

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