How to make vertical led

Abstract

The invention provides a vertical type LED manufacturing method. An existing undoped layer is etched as a current blocking layer, an insulated dielectric layer does not need to be additionally formed, the process steps are decreased, and production cost is lowered; meanwhile, the formed current blocking layer can improve the current expanding of a vertical type LED under the large current, current distribution is even, and therefore the luminous intensity of the vertical type LED is improved.

Description

Technical field [0001] The invention relates to the field of LED manufacturing, in particular to a method for manufacturing a vertical LED. Background technique [0002] In recent years, the research on high-power lighting light-emitting diodes (Light-Emitting Diode, LED) has become a trend. However, the traditional LED chips with the same side structure have the shortcomings of current crowding, excessive voltage and difficult heat dissipation. It is difficult to meet the requirements of high-power LED chips. The vertical LED chip can not only effectively solve the crowding effect under high current injection, but also alleviate the decrease in internal quantum efficiency caused by high current injection, and improve the photoelectric performance of the vertical LED chip. [0003] At present, the preparation process of vertical LED chips is mainly to grow GaN on a substrate (usually a sapphire material), make a contact layer and a metal mirror layer on the GaN-based epitaxial laye...

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Problems solved by technology

[0005] However, this process requires additional deposition of SiO 2 , and is also required for deposited SiO 2 Etching, this process is not only complicated but also increases the process cost, which is not conducive to mass production with reduced cost

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