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RRAM

A random access storage, resistive technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of low resistance and insufficient retention performance

Active Publication Date: 2017-01-18
KIOXIA CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a resistance random access memory device whose variable resistance layer is formed of a semiconductor material has a problem of insufficient retention performance in a written state, that is, a low resistance state.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0022] First, the first embodiment will be described.

[0023] figure 1 is a cross-sectional view showing a memory element of a resistive random access memory device according to an embodiment.

[0024] Such as figure 1 As shown, in the memory element 10 of the resistive random access memory device according to this embodiment, the electrode 11, the insulating layer 12, the crystal layer 13, the insulating layer 14, and the electrode 15 are stacked in the following order. The variable resistance portion 20 is formed from the insulating layer 12 , the crystal layer 13 and the insulating layer 14 .

[0025] The electrode 11 is a conductive metal for supplying ions to the variable resistance part 20 . For this purpose, the material of the electrodes 11 is based on easily ionizable metals. For example, the material of the electrode 11 may be based on one or more metals selected from the group consisting of silver (Ag), copper (Cu), cobalt (Co), nickel (Ni), aluminum (Al), tita...

no. 2 example

[0071] A second embodiment will be described below.

[0072] Figure 7 is a cross-sectional view showing a memory element of a resistive random access memory device according to an embodiment.

[0073] Such as Figure 7 As shown, the memory element 30 of the resistive random access memory device according to this embodiment includes, in addition to the memory element 10 of the above-mentioned first embodiment (refer to figure 1 ) configuration also includes a non-metallic layer 32. The non-metallic layer 32 is interposed between the electrode 11 and the variable resistance portion 20 , that is, between the electrode 11 and the insulating layer 12 .

[0074] The non-metallic layer 32 is a layer interposed between the electrode 11 and the electrode 15 and has the following characteristics. When a write voltage or a read voltage of a forward voltage is applied, a filament is formed within the layer, and the resistance value of the layer decreases. In addition, the filaments ...

no. 3 example

[0087] A third embodiment will be described below.

[0088] Figure 9 is a cross-sectional view showing a memory element of a resistive random access memory device according to an embodiment.

[0089] Such as Figure 9 As shown, the memory element 40 of the resistive random access memory device according to this embodiment is different from the above-mentioned memory element 30 of the second embodiment (refer to Figure 7 ) in that the non-metallic layer 32 is interposed between the electrode 15 and the variable resistance portion 20 , that is, between the electrode 15 and the insulating layer 14 .

[0090] Also according to this embodiment, a rectification function can be added to the memory element 40 as in the above-described second embodiment. That is, the non-metallic layer 32 may be placed anywhere between the electrode 11 and the electrode 15 so that when a prescribed read voltage is applied, a filament is formed from the cations of the metal atoms constituting the e...

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PUM

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Abstract

A resistance random access memory device according to an embodiment includes a first electrode, a second electrode, and a variable resistance portion interposed between the first electrode and the second electrode. The variable resistance part includes a first insulating layer, a second insulating layer, and a crystal layer interposed between the first insulating layer and the second insulating layer and having a resistivity higher than that of the first electrode. , and is a crystal.

Description

[0001] Cross References to Related Applications [0002] This application is based on, and claims priority from, prior US Provisional Patent Application 61 / 803,211 filed March 19, 2013, the entire contents of which are hereby incorporated by reference. technical field [0003] Embodiments described herein relate generally to resistive random access memory devices. Background technique [0004] A resistive random access memory device (ReRAM) is a nonvolatile memory device in which a memory element has a two-terminal structure including a variable resistance layer sandwiched between two electrodes. A resistive random access memory device has a simpler cell structure than other memory devices, and thus is considered easy to be miniaturized. Therefore, resistive random access memory devices are attracting increasing attention as a strong candidate for next-generation high-capacity memory devices replacing existing products such as NAND flash memory widely sold as high-capacity ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/30H10B63/84H10N70/245H10N70/8416H10N70/826H10N70/884
Inventor 石川贵之藤井章辅宫川英典田中洋毅斋藤真澄
Owner KIOXIA CORP