A kind of processing method of heat exchange method sapphire seed crystal

Abstract

The invention relates to a method for machining sapphire crystal seeds with the HEM. The method includes the following steps: (1) marking out two crystal seed crystal ingot evolution lines parallel to a C axis on sapphire crystals; (2) conducting evolution along the evolution lines; (3) cleaning crystal seed crystal ingot evolution fracture surfaces after evolution; (4) conducting characterization on crystal seed crystal ingots, and marking defective areas on the crystal seed crystal ingot evolution fracture surfaces; (5) fixing the crystal seed crystal ingots to a working table of a vertical type CNC machining center, and drawing out crystal seed crystal bars; (6) enabling the defective areas to be marked on the crystal seed crystal bars in comparison with defective identification on the crystal seed crystal ingot evolution fracture surfaces; (7) cutting off the crystal seed crystal bars with a diamond single wire cutting machine tool; (8) flatly grinding the crystal seed fracture surfaces on a flat grinder. The crystal using rate can be greatly improved and can be as high as 60%-80%, the crystal seed quality is controllable, the machining process is easy to operate, the production efficiency of enterprises is improved, and the enterprise cost is reduced.

Description

technical field [0001] The invention relates to a processing method of a heat exchange method (HEM) sapphire seed crystal. Background technique [0002] Sapphire crystals are widely used in high-brightness LED substrate materials, various optical components, and various window materials. At present, the seed crystals used in the heat exchange method (HEM) sapphire crystal growth are mainly taken from the whole sapphire crystal, and there are two disadvantages: 1. The utilization rate of the crystal is low, only 30-40%; The quality is characterized, and if the obtained seed crystal has defects, it will lead to the scrapping of the entire sapphire crystal that will be grown later. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a heat exchange method (HEM) sapphire seed crystal processing with high crystal utilization rate, crystal utilization rate up to 60-80%, controllable seed crystal quality and simple process...

AI Technical Summary

Problems solved by technology

At present, the seed crystals used in the heat exchange method (HEM) sapphire crystal growth are mainly taken from the whole sapphire crystal, and there are two disadvantages: 1. The utilization rate of the crystal is low, only 30-40%; Characterize the quality of the sapphire crystal. If the obtained seed crystal has defects, it will lead to the scrapping of the entire sapphire crystal grown subsequently.

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