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Metal organic chemical vapor deposition device, gas spray component and gas distribution control method

A metal-organic chemistry, gas distribution technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of expensive, complex processing and high maintenance costs

Active Publication Date: 2014-11-12
DEPOSITION EQUIP & APPL SHANGHAI LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its processing is extremely complicated and expensive, and subsequent maintenance costs are high

Method used

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  • Metal organic chemical vapor deposition device, gas spray component and gas distribution control method
  • Metal organic chemical vapor deposition device, gas spray component and gas distribution control method
  • Metal organic chemical vapor deposition device, gas spray component and gas distribution control method

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Embodiment Construction

[0046] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0047] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0048] figure 1 It is a schematic cross-sectional structure diagram of the metal-organic vapor deposition device provided by the present invention. see figure 1 , the metal chemical vapor deposition device 10 includes a reaction chamber 11, a gas shower assembly 12 and a base 13 arranged in the reaction chamber 11; the gas shower assembly 12 is fixedly arranged on the top of the reaction chamber 11, so The base 13 is disposed at the bot...

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Abstract

The invention relates to a metal organic chemical vapor deposition device, a gas spray assembly and a gas distribution control method, the gas spray assembly includes a first gas inlet pipe, a second gas inlet pipe and a third gas inlet pipe which are respectively used for transmit a first gas, a second gas and a third gas to a gas distribution unit, the gas distribution unit is an integrally formed single layer structure, and comprises an A type gas distribution chamber, a B type gas distribution chamber and a C type gas distribution chamber which are arranged at intervals, and are respectively used for distribution of the first gas, the second gas and the third gas, and sections of horizontal planes and vertical planes are continuous roundabout sections in the interval arrangement. According to the invention, the number of gas distribution chambers of two kinds of reaction gases can be regulated, and growth of a variety of materials can be achieved in a single reaction unit. The gas distribution unit is the integrally formed single layer structure, avoids the complex multi-layer and multi-spot welding processing, and greatly reduces the production cost.

Description

technical field [0001] The invention relates to the field of semiconductor thin film preparation equipment and preparation technology, and in particular, the invention relates to a metal organic chemical vapor deposition device, a gas spray assembly and a control method for gas distribution thereof. Background technique [0002] Chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is a chemical reaction of reacting substances under gaseous conditions, and the formation of solid substances is deposited on the surface of a heated solid substrate to obtain solid materials. It is realized by chemical vapor deposition equipment. . Specifically, the CVD device feeds the reaction gas into the reaction chamber through the gas inlet device, and controls reaction conditions such as pressure and temperature of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process steps. Chemical vapor deposition includes many types, such ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/30C23C16/52
Inventor 马悦萨尔瓦多奚明
Owner DEPOSITION EQUIP & APPL SHANGHAI LTD
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