In2O3-WO3 oxide semiconductor acetone sensor, preparation method and application thereof

An oxide semiconductor, in2o3-wo3 technology, applied in textiles and papermaking, fiber processing, material resistance, etc., can solve the problems of high detection limit and low sensitivity of sensors, and achieve the effect of low detection limit, high sensitivity and favorable cost

Inactive Publication Date: 2014-11-19
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One of the main factors limiting the practicality of this type of sensor is the high detection limit and low sensitivity of the sensor.

Method used

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  • In2O3-WO3 oxide semiconductor acetone sensor, preparation method and application thereof
  • In2O3-WO3 oxide semiconductor acetone sensor, preparation method and application thereof
  • In2O3-WO3 oxide semiconductor acetone sensor, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] In with a molar ratio of 0.005:1 2 o 3 -WO 3 Oxide semiconductors are used as sensitive materials to make acetone sensors, and the manufacturing process is as follows

[0040] 1. First add 4mmol WCl 6 , 0.04mmol In(NO 3 ) 3 4.5H 2 0 and 1.25g polyvinylpyrrolidone were dissolved in the mixed solution of 9g dimethylformamide, 1g ethanol and 0.2g acetic acid, stirred for 4 hours to form a sol;

[0041] 2. Put the above solution into the electrospinning device, make the distance between the collecting plate and the spinneret 10cm, the applied voltage of the spinneret is +15kv, the collecting plate is grounded, and the material is collected after 3 hours of experiment;

[0042] 3. Put the collected materials into a high-temperature resistance furnace for calcination at 500°C for 120 minutes to obtain In 2 o 3 -WO 3 nanowire-sensitive materials. Take a small amount of sensitive material powder, drop it into deionized water at a mass ratio of 4:1, and grind it into a...

Embodiment 2

[0045] In with a molar ratio of 0.015:1 2 o 3 -WO 3 Oxide semiconductors are used as sensitive materials to make acetone sensors, and the manufacturing process is as follows

[0046] 1. First add 4mmol WCl 6 , 0.12mmol In(NO 3 ) 3 4.5H 2 0 and 1.25g polyvinylpyrrolidone were dissolved in the mixed solution of 9g dimethylformamide, 1g ethanol and 0.2g acetic acid, stirred for 4 hours to form a sol;

[0047] 2. Put the above solution into the electrospinning device, make the distance between the collecting plate and the spinneret 10cm, the applied voltage of the spinneret is +15kv, the collecting plate is grounded, and the material is collected after 3 hours of experiment;

[0048] 3. Put the collected materials into a high-temperature resistance furnace for calcination at 500°C for 120 minutes to obtain In 2 o 3 -WO 3 nanowire-sensitive materials. Take a small amount of sensitive material powder, drop it into deionized water at a mass ratio of 4:1, and grind it into a...

Embodiment 3

[0051] use In 2 o 3 with WO 3 In with a molar ratio of 0.03:1 2 o 3 -WO 3 Oxide semiconductors are used as sensitive materials to make acetone sensors, and the manufacturing process is as follows

[0052] 1. First add 4mmol WCl 6 , 0.24mmol In(NO 3 ) 3 4.5H 2 0 and 1.25g polyvinylpyrrolidone were dissolved in the mixed solution of 9g dimethylformamide, 1g ethanol and 0.2g acetic acid, stirred for 4 hours to form a sol;

[0053] 2. Put the above solution into the electrospinning device, make the distance between the collecting plate and the spinneret 10cm, the applied voltage of the spinneret is +15kv, the collecting plate is grounded, and the material is collected after 3 hours of experiment;

[0054] 3. Put the collected materials into a high-temperature resistance furnace for calcination at 500°C for 120 minutes to obtain In 2 o 3 -WO 3 nanowire-sensitive materials. Take a small amount of sensitive material powder, drop it into deionized water at a mass ratio of...

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Abstract

An In2O3-WO3 oxide semiconductor acetone sensor manufactured through an electrostatic-spinning technology, a preparation method and an application of the acetone sensor in detection of whether a person is suffered from diabetes. The invention belongs to the technical field of a gas sensor. The sensor is composed of: a commercially-available Al2O3 insulation ceramic tube of which an outer surface is provided with two annular golden electrodes; an In2O3-WO3 oxide semiconductor sensitive material which coats external surfaces of the annular golden electrodes and the Al2O3 insulation ceramic tube; and a nickel-cadmium alloy heating coil which passes through the interior of the Al2O3 insulation ceramic tube. The sensor has a good linearity on low-concentration acetone, which enables the In2O3-WO3 oxide semiconductor acetone sensor to be capable of being applied in non-invasive medicinal detection well and further to be capable of determining whether a tested person is suffered from diabetes through detection of content of the acetone in breath of the tested person.

Description

technical field [0001] The invention belongs to the technical field of gas sensors, in particular to an In 2 o 3 -WO 3 An oxide semiconductor acetone sensor, a preparation method and its application in detecting whether a person suffers from diabetes. Background technique [0002] Compared with traditional blood tests and urine tests, breath testing is a new type of non-invasive medical testing method, which has the advantages of instant, convenient and painless. There are hundreds of volatile organic compounds in human breath. By detecting the content of these volatile organic compounds, it can be judged whether the tester suffers from a certain disease, so as to create conditions for better cure of the disease. [0003] Acetone is a metabolite of fat breakdown in the human body, and acetone is excreted when a person exhales. The content of acetone in the breath of healthy people is less than 0.9ppm, but due to the lack of sufficient insulin in the body of diabetic pati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12D01D5/00
Inventor 卢革宇冯昌浩李鑫孙彦峰孙鹏郑杰马健
Owner JILIN UNIV
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