Array substrate, manufacturing method thereof and display device

Abstract

The invention provides an array substrate, a manufacturing method thereof and a display device and belongs to the field of liquid crystal display. The array substrate comprises a base substrate, wherein gate lines, data lines, a thin-film transistor, a common electrode, a pixel electrode and a passivation layer are formed on the base substrate, the gate lines and the data lines intersect, so as to define a plurality of pixel areas, the thin-film transistor comprises a gate electrode connected with the gate lines, a source electrode connected with the data lines and a drain electrode connected with the pixel electrode, a conductive pattern is formed on the upside of the gate electrode, and the projection of the gate electrode in the direction vertical to the base substrate falls into the conductive pattern. The technical scheme provided by the invention has the advantages that the dark zone phenomenon of the display device can be eliminated, and the display quality of the display device is improved.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] With the progress of the TFT industry and the improvement of technology, ADS (ADvanced Super Dimension Switch, Advanced Super Dimension Switch) wide viewing angle technology has been applied to more and more products, including mobile phones, digital cameras, tablet computers, notebook computers , and LCD TVs, etc., its excellent display characteristics have been praised by more and more users, and its market competitiveness is very strong. [0003] ADS technology is to form a multi-dimensional electric field through the electric field generated by the edge of the slit electrode in the same plane and the electric field generated between the slit electrode layer and the plate electrode layer, so that all oriented liquid crystal molecules between the slit electrodes and dire...

AI Technical Summary

Problems solved by technology

like figure 1 As shown, the common electrode pattern includes a plurality of hollowed out areas S, the width of the hollowed out area S is d, and the length is not greater than the length of a pixel area. The area M in the figure is the area where the common electrode and the pixel electrode overlap. In the hollowed out area S The area inside the dotted line frame at the lower end will form a dark area due to the disorder of liquid crystal orientation, which will seriously affect the transmittance of the display panel and affect the display of the display panel; at the same time, when the display panel is working, the electric field formed by the gate electrode will often affect the deflection of the liquid crystal. , causing light leakage in the area near the gate electrode. In order for the common electrode to block the light leakage, the end of the hollowed out region S needs to maintain a distance of at least a from the gate electrode, so that the position of the dark area formed at the end of the hollowed out region S in the pixel area It will be relatively high, which will further affect the light effect of the display panel

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