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Figure pretreatment method and method for measuring figure density

A pre-processing and graphic technology, applied in the direction of photolithography exposure device, micro-lithography exposure equipment, etc., can solve the problem of rounding of right-angled edges and achieve the effect of accurate graphic density

Active Publication Date: 2014-12-17
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a pattern and processing method and a method for measuring pattern density, to solve the problem that the right-angled edges of the target pattern or redundant pattern are rounded during the lithography process of the photolithography process, and to carry out the target pattern or redundant pattern Preprocessing makes the measured pattern density closer to the pattern density on the silicon wafer in the real photolithography process, making the measured pattern density more accurate

Method used

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  • Figure pretreatment method and method for measuring figure density
  • Figure pretreatment method and method for measuring figure density
  • Figure pretreatment method and method for measuring figure density

Examples

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no. 1 example

[0048] The following combination Figure 2a , Figure 2b , Figure 2c as well as image 3 , specifically illustrate the graphic preprocessing method of the present invention. In this embodiment, the right angles in the figure are all 90° as an example for specific description.

[0049] As shown in FIG. 2 , a pattern 10 is provided. The pattern 10 is a pattern on a photoresist plate, and a certain right angle ψ1 in the pattern 10 is 90°. The minimum line width of the photolithography process is determined to be L, and the side lengths of the two right-angled sides corresponding to the right angle ψ1 are the first side length E1 and the second side length E2. Obtain the ratio relationship between the first side length E1 and the second side length E2 and the minimum line width L, which are respectively the first ratio X and the second ratio Y, according to the ratio side length comparison table, in the An isosceles right triangle 20 is cut off at the right angle ψ1 in the f...

no. 2 example

[0067] The following combination Figure 4a-Figure 4c , specifically illustrate the graphic preprocessing method of the present invention. In this embodiment, the right angles in the figure include both 90° and 270° angles.

[0068] Such as image 3 As shown, a figure 40 is provided, the analog figure 50 corresponding to the figure 40, the right angles of the figure have ψ3, ψ4, ψ5, ψ6, ψ7 to be 90°, and the right angle ψ2 to be 270°, determine the light of the figure The minimum line width in the engraving process is L'. The preprocessing method for the 90° right angles ψ3, ψ4, ψ5, ψ6, ψ7 is the same as the method in the first embodiment, and an isosceles is cut off at the right angles ψ3, ψ4, ψ5, ψ6, ψ7 respectively Right triangles 603, 604, 605, 606, 607.

[0069] However, for the right angle ψ2 of 270°, according to the comparison table of ratio and side length relationship, an isosceles right triangle whose side length is equal to the value E3' of the right angle side...

no. 3 example

[0072] The following combination Figure 5 , specifically illustrate the graphic preprocessing method of the present invention. In this embodiment, the right angles in the figure include both 90° and 270° angles.

[0073] refer to Figure 5 As shown, there is a right angle ψ8 of 90° in the figure in this embodiment. Determine the minimum line width L" in the photolithography process, determine the size of the first side length and the second side length of the two right-angled sides of the right angle ψ9, and determine the first side length E1" of ψ9. The ratio relationship X" and Y" of E1" and E2" to L" is obtained. Since X"<1, at this time, the graphics are not preprocessed. Similarly, for the right angle ψ9 of 270°, since the ratio of the first side length corresponding to the right angle ψ9 to the minimum line width is less than 1, no preprocessing is performed on the right angle ψ9.

[0074] In this embodiment, the preprocessed graphic 70' of the graphic 70 is the sam...

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Abstract

The invention discloses a figure pretreatment method and a method for measuring figure density. The figure pretreatment method comprises cutting off or making up an isosceles right triangle at a right angle position with the angle of 90 DEG or 270 DEG of the figure. The method for measuring figure density comprises: providing a photoetching mask plate layout, dividing the photoetching mask plate layout into a plurality of units according to the unit area, wherein each unit comprises a plurality of target figures and a plurality of redundant figures; employing the figure pretreatment method to respectively pretreat the target figures and the redundant figures, so as to obtain pretreated target figures and pretreated redundant figures; calculating the area of all pretreated target figures and all pretreated redundant figures in the units, so as to obtain a total area, and dividing the total area by the unit area, so as to obtain the figure density of the corresponding unit. By correcting the right angles of the target figures and the redundant figures, the finally-calculated figure density is relatively accurate.

Description

technical field [0001] The invention relates to the technical field of semiconductor photolithography, in particular to a pattern preprocessing method and a method for measuring pattern density. Background technique [0002] With the development of integrated circuit technology, pattern density inspection and analysis has become an important step in the data processing of many key-level masks; in the semiconductor manufacturing process, the uniformity of pattern distribution density has a great impact on many etching steps. In the case of uneven distribution, it is easy to aggravate the load effect in the etching step, causing the final size of some patterns to deviate from the target size. In addition, in the CMP (Chemical Mechanical Polishing) process, the pattern distribution density also has a certain influence on the grinding result of CMP, and a good pattern distribution density is also one of the requirements to ensure the flatness of the film after polishing. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 何大权倪念慈魏芳朱骏吕煜坤张旭昇
Owner SHANGHAI HUALI MICROELECTRONICS CORP