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Pn heterojunction diode made of NiO:Cu/ZnO thin films

A pn junction and diode technology, applied in the field of NiO: Cu/ZnO heterogeneous pn junction diodes, to achieve the effect of improving performance

Inactive Publication Date: 2014-12-17
TIANJIN UNIV OF TECH & EDUCATION TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This choice is of great significance for the development of new devices, but there is no report on the NiO:Cu / ZnO heterojunction.

Method used

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  • Pn heterojunction diode made of NiO:Cu/ZnO thin films
  • Pn heterojunction diode made of NiO:Cu/ZnO thin films
  • Pn heterojunction diode made of NiO:Cu/ZnO thin films

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Experimental program
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Effect test

preparation example Construction

[0018] (3) Preparation of n-ZnO: the background vacuum of the chamber before sputtering is better than 3x10 -4 pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%-100%, the sputtering pressure is 0.5-2Pa, and the sputtering power is 50-150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 20-120 minutes, the substrate temperature is RT-600° C. and the temperature is 200° C. to 700° C. and annealed for 0.5 to 1 hour.

[0019] (4) Preparation of electrodes: Ni electrodes were fabricated on the edges of NiO: Cu and ZnO surfaces by thermal evaporation.

[0020] (5) Test Keithley2612A to detect the ohmic contact characteristics of the electrode and the I-V characteristics (rectification characteristics) of the heterogeneous pn junction diode.

Embodiment 1

[0022] (1) Clean the silicon wafer with the cleaning method in the semiconductor process and dry it with nitrogen;

[0023] (2) Preparation of p-NiO: Cu: A NiO: CuO ceramic target with a diameter of 50 mm was used. NiO:Cu thin films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, and the substrate temperature is 300°C.

[0024] (3) Preparation of n-ZnO: A ZnO ceramic target with a diameter of 50 mm was used. The chamber background vacuum before sputtering is better than 3x10 -4 pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 0.5Pa, and the sputtering power is 75W. Before coating, pre-sputter for 5 min to remove impurities on...

Embodiment 2

[0028] (1) Clean the silicon wafer with the cleaning method in the semiconductor process and dry it with nitrogen;

[0029] (2) Preparation of p-NiO: Cu: A NiO: Cu ceramic target with a diameter of 50 mm was used. NiO:Cu thin films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, and the substrate temperature is 400°C. Preparation of n-ZnO: A ZnO ceramic target with a diameter of 50 mm was used. The chamber background vacuum before sputtering is better than 3x10 -4 pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 0.5Pa, and the sputtering power is 75W. Before coating, pre-sputter for 5 min to remove impurities on the target su...

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Abstract

The invention discloses a pn heterojunction diode made of NiO:Cu / ZnO thin films. The pn heterojunction diode at least comprises a pn junction and an Ohmic contact electrode. The pn junction generates p type NiO:Cu thin films and ZnO thin films on a Si substrate to acquire a pn heterojunction. According to the arrangement, the pn heterojunction diode is prepared on the Si substrate by a magnetron sputtering method, and the electrode is produced on the pn junction by the magnetron sputtering method or heat evaporation method. The pn heterojunction diode has the advantages that reverse breakdown voltage is high, forward current density is large, a production method is simple, and cost is low.

Description

technical field [0001] The invention relates to a NiO: Cu / ZnO heterogeneous pn junction diode. The invention belongs to the field of functional materials and optoelectronic devices. Background technique [0002] The internal degrees of freedom of the d(f) electrons contained in the strongly correlated material NiO, such as the interaction between spin, charge, and orbit, make NiO exhibit many exotic properties, and at the same time make the physical properties of the material vary with internal parameters such as temperature , pressure, and doping changes significantly. So far, NiO has been used in the research of catalysts, battery electrodes, electrochemical capacitors and other fields because of its good catalytic performance and thermal sensitivity, but there are few reports on its photoelectric properties. Semiconductor heterojunctions are easy to realize the separation of photogenerated charges and are widely used in the research and development of optoelectronic dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/8611H01L29/225H01L29/66136
Inventor 李彤
Owner TIANJIN UNIV OF TECH & EDUCATION TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE