Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nonvolatile memory with power supply switching function

A non-volatile, memory technology, used in static memory, read-only memory, information storage, etc., can solve problems such as limitations, achieve flexible selection, reduce power wiring, and avoid latch-up effects.

Active Publication Date: 2014-12-31
WINBOND ELECTRONICS CORP
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since V DD With no proprietary control mechanism for variable input and output power supplies, system designers may be limited by power supply wiring, boot procedures, and latch-up effects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nonvolatile memory with power supply switching function
  • Nonvolatile memory with power supply switching function
  • Nonvolatile memory with power supply switching function

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] figure 1 is a block diagram of a non-volatile memory according to an embodiment of the present invention. Please refer to figure 1 , the nonvolatile memory 100 may include a first switch 110 , a second switch 120 , a switch controller 140 and a power demand device 130 . The nonvolatile memory 100 is, for example, a flash memory. The first switch includes a first terminal, a second terminal, a third terminal and a first control terminal. The second switch includes a fourth terminal, a fifth terminal, a sixth terminal and a second control terminal. The switch controller 140 is coupled to the first control terminal of the first switch 110 and the second control terminal of the second switch 120 for transmitting a first control signal C1 to the first switch 110 to control the connection of the third terminal to the second switch 120. One terminal or the second terminal, and transmit the second control signal C2 to the second switch 120 to control the fourth terminal to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a nonvolatile memory. The nonvolatile memory includes a first switch, a switch controller and a power requirement device. The first switch includes a first end, a second end, a third end and a first control end. The nonvolatile memory also includes a second switch, and the second switch has a fourth end, a fifth end, a sixth end and a second control end. The switch controller is coupled to the first control end of the first switch and the second control end of the second switch, and is used for transmitting a first control signal to the first switch to control the connection of the third end to the first end or the second end, and transmitting a second control signal to the second switch to control the connection of the fourth end to the fifth end or the sixth end. The power requirement device receives a first voltage from the third end of the first switch, and transmits a second voltage to the fourth end of the second switch.

Description

technical field [0001] The invention relates to a nonvolatile memory with power switching function. Background technique [0002] In the existing technical field, flash memory needs to be independent of V DD The power wiring to supply power to the input and output buffers (Input / Output Buffers) and drivers. Since this independent supply can be lower or higher than V DD , which can be called a variable input and output power supply. Host systems using flash memory can use this variable input and output power supply to set acceptable voltage levels for input and output ports in the system. However, since V DD With no proprietary control mechanism for variable input and output power supplies, system designers may be limited by power supply routing, boot procedures, and latch-up effects. Contents of the invention [0003] In view of this, the object of the present invention is to provide a non-volatile memory with power switching function, which can switch power according...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/30
Inventor 柳弼相
Owner WINBOND ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com