Antibacterial memory antistatic radiation protection fabric

An antistatic and anti-radiation technology, which is applied in the field of textile fabrics, to achieve the effects of strong three-dimensional effect, unique memory function and good antibacterial effect

Inactive Publication Date: 2015-01-07
JIANGYIN HANXIN TEXTILE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the traditional fabrics used to make clothing bodies do not ha

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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  • Antibacterial memory antistatic radiation protection fabric

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Example Embodiment

[0013] see figure 1 , the present invention relates to an antibacterial memory antistatic radiation protection fabric, comprising a base layer 2 and an antibacterial layer 1, the antibacterial layer 1 is made by interconnecting warp yarns 11 and weft yarns 12, and the warp yarns 11 and weft yarns 12 are woven with nano-silver fibers The thickness of the antibacterial layer 1 is 0.2 mm.

[0014] The base layer is made of fabric, and the fabric adopts PTT memory color yarn as warp yarn, and adopts PET polyester fine denier special-shaped shiny yarn as weft yarn; the warp yarn and weft yarn adopt 3 / 1 twill weave Or 1 / 1 plain weave or 3 / 1 twill + 1 / 1 plain weave cavalry twill structure woven into fabrics.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Abstract

The invention relates to an antibacterial memory antistatic radiation protection fabric. The antibacterial memory antistatic radiation protection fabric comprises a basic layer (2) and an antibacterial layer (1), wherein the antibacterial layer (1) is formed by mutually connecting warp yarns (11) and weft yarns (12), and the warp yarns (11) and the weft yarns (12) are formed by weaving nano silver fibers; the basic layer is made of fabric, the fabric adopts PTT memory color yarns as warp yarns and PET terylene fine specially-shaped bright yarns as weft yarns; the warp yarns and the weft yarns are woven in a calvary twill organized structure of 3/1 cross grain, 1/1 plain grain, 3/1 cross grain and 1/1 plain grains to form a fabric. The antibactieral memory antistatic radiation protection fabric is good in antibacterial effect, so that the harm of bacteria on the human body can be reduced. The antibactieral memory antistatic radiation protection fabric has a memory function, an antistatic function and a radiation-protection function.

Description

technical field [0001] The invention relates to a textile fabric, in particular to an antibacterial memory antistatic anti-radiation fabric. Background technique [0002] People wear clothes to study, work and live in various occasions every day, and they will come into contact with various bacteria unconsciously, which will accumulate and enrich for a long time, which will cause harm to human health. In addition, the traditional fabrics used to make clothing bodies do not have memory function, antistatic and anti-radiation effects at the same time. Contents of the invention [0003] The purpose of the present invention is to overcome the above disadvantages and provide an antibacterial memory antistatic anti-radiation fabric, which can improve the antibacterial efficiency and reduce the harm to human health. [0004] The object of the present invention is achieved in this way: an antibacterial memory antistatic anti-radiation fabric, comprising a base layer and an antiba...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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IPC IPC(8): B32B15/02B32B5/08B32B33/00
CPCA41D31/02B32B5/26B32B2262/0276B32B2262/103B32B2307/21B32B2307/212B32B2437/00D03D13/00D03D13/002D10B2331/04D03D15/258D03D15/63
Inventor 黄文平
Owner JIANGYIN HANXIN TEXTILE
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