Grid-type gas distribution device for MOCVD (metal-organic chemical vapor deposition) reactor

Abstract

The invention discloses a grid-type gas distribution device for an MOCVD (metal-organic chemical vapor deposition) reactor. The grid-type gas distribution device is provided with three independent inlet gas paths, namely a gas path containing a first reactant source material, a gas path containing a second reactant source material and a carrier gas gas path. The three paths of gases enter a reaction chamber from grid-type gas nozzles, wherein the carrier gas gas path is also provided with an annular gas nozzle. The carrier gas gas path forms an isolation gas curtain to separate the gas containing the first reaction source from the gas containing the second reaction source, and the annular carrier gas nozzle separates the inner space of the reaction chamber from the reaction chamber wall. The grid-type gas distribution device effectively inhibits the pre-reaction among the reactants in the reaction chamber, and can reduce the generation of deposits on the reaction chamber wall, thereby enhancing the utilization ratio of the reactant source materials, greatly prolonging the cleaning period inside the reaction chamber and enhancing the equipment utilization ratio.

Description

technical field [0001] The invention relates to a grid-type gas distribution device for an MOCVD reactor, in particular to a vertical grid-type gas shower head for isolating reactant source materials of the MOCVD reactor. Background technique [0002] MOCVD (Metal Organic Chemical Vapor Deposition) equipment, that is, metal organic chemical vapor deposition equipment, through the metal organic source (MO source) containing group II or group III elements and the gas source containing group VI or group V elements under strict control React on the wafer under certain conditions, and grow to obtain the required thin film material. Generally, the metal-organic source enters the reaction chamber through the carrier gas. The carrier gas can be hydrogen, nitrogen, inert gas and other gases that do not chemically react with the reactant source material. The carrier gas containing the MO source is called the first precursor gas; The gas of group or group V elements is generally mixed...

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Problems solved by technology

[0004] In order to overcome the problems of strong pre-reaction between reactant source materials and excessive deposits on the wall of the vertical reaction chamber, and at the same time ensure that the shower head is simple and convenient to manufacture, the present invention aims to provide a kind of isolated gas for MOCVD reactor. Distribution device, the gas distribution device can effectively suppress the pre-reaction between reactant source materials, achieve the purpose of growing high-quality AlN / AlGaN film, and can greatly reduce the appearance of deposited reactants on the outer wall of the reaction area in the vertical reaction chamber, Extend the cleaning cycle of the reaction chamber and improve equipment utilization

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