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Data inversion based storage method and memory

A memory and phase-change memory technology, applied in the computer field, can solve the problems of low data storage efficiency and high energy consumption, and achieve the effect of overcoming high energy consumption and improving efficiency

Inactive Publication Date: 2015-01-14
HUAWEI TECH CO LTD +1
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The above PCM data storage method needs to read the original data before writing the data, and needs to compare the data to be stored with the original data, which has the problems of high energy consumption and low data storage efficiency

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Embodiment Construction

[0047] The technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0048] When writing "0" into the PCM, a high voltage needs to be applied to the memory cell to change the state of the memory cell to an amorphous state. In the amorphous state, the resistance of the memory cell is high, which is used to represent the value "0". When writing "1" to PCM, a low voltage needs to be applied to the memory cell to make the memory cell become crystalline. In the crystalline state, the memory cell has low resistance and is used to represent the value "1". In the above PCM data writing manner, the energy consumption of writing "0" is greater than the energy consumption of writing "1".

[0049]In practical applications, the frequency of the value "0" is significantly higher than the frequency of the value "1", and the energy consumption of writing "0" to the PCM is greater than the energy cons...

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Abstract

A storage method and apparatus based on data inversion. The apparatus comprises: a NOT gate array and a PCM. The NOT gate array comprises a NOT gate arranged on each data line. The NOT gate array is used to invert a value of each bit in initial data to obtain target data of the initial data, and input the target data to the PCM. The PCM is used to store the target data. The method comprises: a NOT gate array inverting a value at each bit of initial data to obtain target data of the initial data, and inputting the target data to the PCM; and the PCM storing the target data. When the foregoing storage apparatus and method are used to store data into a PCM, the to-be-stored data is directly inverted and then stored in the PCM, which solves the problem of large energy consumption and overheads in the prior art, and can improve the data storage efficiency.

Description

technical field [0001] The invention relates to computer technology, in particular to a storage method and memory based on data inversion. Background technique [0002] In the past few decades, memory systems have been composed of Dynamic Random Access Memory (DRAM for short). However, the DRAM has a problem of high energy consumption. In order to reduce the energy consumption of the memory system, a non-volatile memory (Non-Volatile Memory, NVM for short) can be used instead of the DRAM to form the memory system. Among them, Phase Change Memory (PCM for short) is a kind of NVM, which can replace DRAM to form a memory system. [0003] Currently, when writing data into the PCM, the original data originally stored in the storage unit is read from the storage unit where the data to be stored is to be written. Compare each digit value in the data to be stored with each digit value in the original data. Compared with the original data, if more than half of the data bits in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
CPCG11C13/0069G11C7/1006G11C13/0004G11C2211/5647
Inventor 张立新夏飞熊劲蒋德钧
Owner HUAWEI TECH CO LTD
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